申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20190010119A1
公开(公告)日:2019-01-10
The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.
本发明提供了一种抗蚀剂组合物,包括:(A)含有阴离子和阳离子的磺酸盐,其中阳离子包括以下通式(A1)所示的部分结构;以及(B)含有以下通式(B1)所示的重复单元的聚合物化合物。本发明提供了一种抗蚀剂组合物,其在使用高能量光束作为光源的光刻技术中,具有调节酸扩散的能力,能够引起较少的缺陷,并且在使用该抗蚀剂组合物进行抗蚀图案化过程中具有出色的光刻性能。