1-Benzotriazol-1-yl-propan-1-ol | 111507-79-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并三唑类
• 英文名称: 1-Benzotriazol-1-yl-propan-1-ol
• 英文别名: 1-(Benzotriazol-1-yl)propan-1-ol
• CAS: 111507-79-0
• 化学式: C₉H₁₁N₃O
• 分子量: 177.206
• InChiKey: PCIUCMMJMCTRFX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  13
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  50.9
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  1-Benzotriazol-1-yl-propan-1-ol 以 氘代二甲亚砜 为溶剂， 生成 T406石油添加剂 、 丙醛
  参考文献：
  名称：

  Katritzky, Alan R.; Perumal, Subbu; Savage, G. Paul, Journal of the Chemical Society. Perkin transactions II, 1990, # 6, p. 921 - 924

  摘要：

  DOI：
• 作为产物：
  描述：

  T406石油添加剂 、 丙醛 以100%的产率得到1-Benzotriazol-1-yl-propan-1-ol
  参考文献：
  名称：

  Katritzky, Alan R.; Rachwal, Stanislaw; Rachwal, Bogumila, Journal of the Chemical Society. Perkin transactions I, 1987, p. 791 - 798

  摘要：

  DOI：

文献信息

• [EN] SYNTHESIS OF VINYL CYCLOBUTYL INTERMEDIATES<br/>[FR] SYNTHÈSE D'INTERMÉDIAIRES DE VINYLCYCLOBUTYLE
  申请人：AMGEN INC

  公开号：WO2021226009A1

  公开（公告）日：2021-11-11

  Provided herein are processes for synthesizing intermediates useful in preparing Mcl-1 inhibitors. In particular, provided herein are processes for synthesizing compound F, or a salt thereof, wherein R1 and OPG2 are described herein. Compound F can be useful in synthesizing compound A1, or a salt of solvate thereof, and compound A2, or a salt of solvate thereof.

  本文提供了用于合成制备Mcl-1抑制剂中间体的过程。特别地，本文提供了用于合成化合物F或其盐的过程，其中R1和OPG2如本文所述。化合物F可以用于合成化合物A1或其盐溶剂，以及化合物A2或其盐溶剂。
• POLISHING COMPOSITION USING POLISHING PARTICLES THAT HAVE HIGH WATER AFFINITY
  申请人：Nissan Chemical Corporation

  公开号：EP3876264A1

  公开（公告）日：2021-09-08

  There is provided a polishing composition comprising silica-based abrasive grains and a polishing method. A polishing composition comprising silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1): Rsp=Rav−Rb/Rb (wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2): SF1=areaofacirclewhosediameterisamaximumdiameteroftheparticle/projectedarea

  本发明提供了一种包含二氧化硅基磨粒的抛光组合物和一种抛光方法。 一种由二氧化硅颗粒组成的抛光组合物，其中在二氧化硅颗粒的胶体二氧化硅分散体的基础上，使用脉冲核磁共振法测得该分散体的 Rsp 为 0.15 至 0.7，胶体二氧化硅颗粒的形状系数 SF1 为 1.20 至 1.80，其中 Rsp 根据公式 (1) 计算：Rsp=Rav-Rb/Rb（其中，Rsp 是表示亲水性的指数；Rav 是胶体二氧化硅分散体弛豫时间的倒数；Rb 是通过从胶体二氧化硅分散体中去除二氧化硅颗粒而得到的空白水溶液弛豫时间的倒数），以及 形状系数 SF1 根据公式 (2) 计算：SF1= 直径为颗粒最大直径的圆的面积/投影面积
• Polishing liquid and polishing method
  申请人：HITACHI CHEMICAL COMPANY, LTD.

  公开号：US11136474B2

  公开（公告）日：2021-10-05

  A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid comprising abrasive grains; a polymer having a cationic group at the terminal; an oxidizing agent; a metal oxide-dissolving agent; and water, in which the polymer has a structural unit derived from an unsaturated carboxylic acid, a weight average molecular weight of the polymer is 20000 or less, and a pH is less than 5.0.

  一种抛光液，用于对含有钨材料的待抛光表面进行抛光，抛光液由磨粒、末端带有阳离子基团的聚合物、氧化剂、金属氧化物溶解剂和水组成，其中聚合物的结构单元来自不饱和羧酸，聚合物的重量平均分子量为 20000 或更小，pH 值小于 5.0。
• Photosensitive resin composition, photosensitive dry film, and pattern forming process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US11460774B2

  公开（公告）日：2022-10-04

  A photosensitive resin composition comprising a polymer containing a silphenylene skeleton and a fluorene skeleton and having a crosslinkable site in the molecule, a phenol compound having a Mw of 300-10,000, a photoacid generator, and a benzotriazole or imidazole compound has improved film properties. Even from a thick film, a fine size pattern can be formed.

  一种光敏树脂组合物具有更好的薄膜性能，该组合物由含有硅亚苯基骨架和芴骨架并在分子中具有可交联位点的聚合物、Mw 为 300-10,000 的苯酚化合物、光酸发生器和苯并三唑或咪唑化合物组成。即使是厚膜，也能形成细小的图案。
• Metal abrasive composition and polishing method
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20040148867A1

  公开（公告）日：2004-08-05

  There is provided a metal abrasive composition which can polish metal wiring at high speed and control the etching rate thereof in manufacturing a semiconductor device. A metal abrasive composition comprises (a) a chelating resin particle having at least one functional group selected from the group consisting of an aminocarboxylic acid group, an aminophosphonic acid group and an iminodiacetic acid group, (b) an inorganic particle, and (c) a surfactant having at least one functional group selected from a group consisting of a carboxylic acid group, a sulfonic acid group and a phosphoric acid group.

  本发明提供了一种金属磨料组合物，可在制造半导体器件时高速抛光金属线并控制其蚀刻速率。金属磨料组合物包括：(a) 螯合树脂颗粒，该颗粒具有至少一个选自氨基羧酸基团、氨基膦酸基团和亚氨基二乙酸基团的官能团；(b) 无机颗粒；(c) 表面活性剂，该表面活性剂具有至少一个选自羧酸基团、磺酸基团和磷酸基团的官能团。

表征谱图