PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:Ohashi Masaki
公开号:US20110003247A1
公开(公告)日:2011-01-06
The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20140296561A1
公开(公告)日:2014-10-02
A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl(meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER.
NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20110189607A1
公开(公告)日:2011-08-04
There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R
1
represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R
2
and R
3
each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R
2
and R
3
may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2455811A1
公开(公告)日:2012-05-23
A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl (meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER.
RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS
申请人:Tachibana Seiichiro
公开号:US20110054133A1
公开(公告)日:2011-03-03
A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.