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1.1.1.2.2.5.5.6.6-Nonafluor-octan | 35262-54-5

中文名称
——
中文别名
——
英文名称
1.1.1.2.2.5.5.6.6-Nonafluor-octan
英文别名
1,1,1,2,2,5,5,6,6-nonafluoro-octane;1,1,1,2,2,5,5,6,6-Nonafluorooctane
1.1.1.2.2.5.5.6.6-Nonafluor-octan化学式
CAS
35262-54-5
化学式
C8H9F9
mdl
——
分子量
276.145
InChiKey
CKEVCVJAFZZXAX-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5
  • 重原子数:
    17
  • 可旋转键数:
    5
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    9

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    描述:
    3,3,4,4-四氟-1,5-己二烯 在 palladium on activated charcoal 氢氧化钾氢气乙酸乙酯 作用下, 以 乙醚乙二醇 为溶剂, 反应 3.0h, 生成 1.1.1.2.2.5.5.6.6-Nonafluor-octan
    参考文献:
    名称:
    3,3,4,4-四氟己基-1,5-二烯的反应。第二部分 在热添加五氟碘乙烷中环化成四元环
    摘要:
    五氟碘乙烷在210–220°下与3,3,4,4-四氟-1,5-二烯反应,生成具有四元环的异常环化产物,这与全氟碘代烷与hexa-1,5-二烯的类似反应相反尽管存在不利的熵变,但仍会产生高度应变的环结构。还分离出少量的含有五元环的异构体饱和单加合物和无环单加合物。通过光谱和化学方法阐明了环状产物的结构。
    DOI:
    10.1039/j39710003959
点击查看最新优质反应信息

文献信息

  • PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:Ohashi Masaki
    公开号:US20110003247A1
    公开(公告)日:2011-01-06
    The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
    照片酸发生剂会产生一种含有笨重环状结构的磺酸基团和直链碳氢基团的磺酸,因此表现出受控的酸扩散行为和适度的活性。该PAG与树脂完全兼容,形成一个抗蚀剂组合物,在器件制造过程中表现良好,并解决了分辨率、LWR和曝光容限等问题。
  • SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20140296561A1
    公开(公告)日:2014-10-02
    A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl(meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER.
    一种含有4-氟苯基的磺鎵盐被引入到聚合物中,该聚合物包含羟基苯基(甲基)丙烯酸酯单元和含酸性易裂解基团的(甲基)丙烯酸酯单元,形成一种聚合物,可用作抗蚀剂组成中的基础树脂。抗蚀剂组成具有高灵敏度、高分辨率和最小化LER。
  • NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:OHASHI Masaki
    公开号:US20110189607A1
    公开(公告)日:2011-08-04
    There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R 1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R 2 and R 3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R 2 and R 3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
    本发明公开了一种由下列通式(1)表示的烷基磺鎵盐。在该式中,X和Y分别表示具有可聚合官能团的基团;Z表示具有1至33个碳原子的双价碳氢基团,可选地含有一个杂原子;R1表示具有1至36个碳原子的双价碳氢基团,可选地含有一个杂原子;R2和R3分别表示具有1至30个碳原子的单价碳氢基团,可选地含有一个杂原子,或者R2和R3可以与该式中的硫原子一起形成环。可以提供一种可用作抗蚀剂组分的烷基磺鎵盐,该抗蚀剂组分在使用高能束如ArF准分子激光、EUV光和电子束作为光源的光刻工艺中,提供高分辨率和优异的LER,以及从该烷基磺鎵盐得到的聚合物、包含该聚合物的抗蚀剂组分和使用该抗蚀剂组分进行图案化处理的方法。
  • Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2455811A1
    公开(公告)日:2012-05-23
    A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl (meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER.
    在由羟基苯基(甲基)丙烯酸酯单元和含酸易变基团的(甲基)丙烯酸酯单元组成的聚合物中,引入具有 4-氟苯基基团的锍盐作为重复单元,形成一种聚合物,可用作光刻胶组合物中的基体树脂。抗蚀剂组合物具有高灵敏度、高分辨率和最小 LER。
  • RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:Tachibana Seiichiro
    公开号:US20110054133A1
    公开(公告)日:2011-03-03
    A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
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