tri(2-methoxymethoxyethyl)amine | 211919-60-7

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: tri(2-methoxymethoxyethyl)amine
• 英文别名: Tris(2-methoxymethoxyethyl)amine；trismethoxymethoxyethylamine；2-(Methoxymethoxy)-N,N-bis[2-(methoxymethoxy)ethyl]ethan-1-amine；2-(methoxymethoxy)-N,N-bis[2-(methoxymethoxy)ethyl]ethanamine
• CAS: 211919-60-7
• 化学式: C₁₂H₂₇NO₆
• 分子量: 281.349
• InChiKey: NRTKFSQKHCMEMO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.3
• 重原子数：
  19
• 可旋转键数：
  15
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  58.6
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为反应物：
  描述：

  tri(2-methoxymethoxyethyl)amine 、 间氯过氧苯甲酸 在 alumina 、 methanol-dichloromethane 、 desired compound 作用下， 以 二氯甲烷 为溶剂， 反应 1.0h， 生成 Tris(2-(methoxymethoxy)ethyl)amine oxide
  参考文献：
  名称：

  Resist composition and patterning process

  摘要：

  一种化学增感正性光阻组合物包括一种含有胺氧结构的化合物作为基本组分，基础树脂，光酸发生剂和有机溶剂。该光阻组合物具有高分辨率，明显防止线型在显影后塌陷，并具有改善的蚀刻抗性。

  公开号：

  US07977027B2
• 作为产物：
  描述：

  potassium tert-butylate 、 三乙醇胺 、 氯甲基甲基醚 、 甲醇 、 四氢呋喃 在 ice 、 乙醚 作用下， 反应 3.5h， 生成 tri(2-methoxymethoxyethyl)amine
  参考文献：
  名称：

  Resist compositions

  摘要：

  一种化学增感正光刻胶组合物，包括下列通式（1）或（2）中至少一种碱性化合物：其中，R1、R2、R3、R7和R8分别独立地表示1至20个碳原子的正常、支链或环烷基，R4、R5、R6、R9和R10分别独立地表示氢、1至20个碳原子的烷基或氨基，R4和R5、R5和R6、R4和R6、或R8、R5和R5、R9和R10共同形成一个环，字母k、m和n是0至20的整数，但当k、m或n等于0时，R4、R5、R6、R9和R10中排除氢。本发明的光刻胶组合物对于防止光刻胶薄化和增加孤立图案的焦点余量是有效的。

  公开号：

  US06274286B1

文献信息

• MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210286266A1

  公开（公告）日：2021-09-16

  The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10 , and R 1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q 1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X 1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R 2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

  本发明是一种用于形成有机薄膜的材料，包括：由以下通用式（1）所示的化合物；和有机溶剂，在通用式（1）中，X代表具有2至50个碳原子或一个氧原子的价为“n”的有机基团，“n”表示1到10的整数，R1独立地表示以下通用式（2）中的任何一种，其中在通用式（2）中，虚线表示连接点到X，Q1表示含有羰基的一价有机基团，其中至少部分是以下通用式（3）所示的基团，其中在通用式（3）中，虚线表示连接点，X1表示单键或具有1到20个碳原子的二价有机基团，在有机基团具有芳香环时可选地具有取代基，R2表示氢原子、甲基基团、乙基基团或苯基团，**表示连接点。本发明的目的是提供一种用于形成具有干法刻蚀抗性的有机薄膜的材料，同时具有高填充和平整化性能以及对基底的粘附性。
• Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
  申请人：——

  公开号：US20040167322A1

  公开（公告）日：2004-08-26

  A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

  一种化学放大型抗蚀组合物，包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷，具有许多优点，包括提高分辨率，改善焦点宽度，即使在长期PED上也减少线宽变化或形状退化，涂层、显影和剥离后减少残留物，并在显影后改善图案轮廓，因此适用于微加工。
• BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Hatakeyama Jun

  公开号：US20120141938A1

  公开（公告）日：2012-06-07

  A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.

  一种化学放大型光刻胶组合物，包括基础聚合物、酸发生剂和胺淬灭剂，后者为β-丙氨酸、γ-氨基丁酸或5-氨基戊酸的衍生物，具有一个被酸不稳定基团所取代的羧基，这种组合物在曝光前后具有高对比度的碱性溶解速率，并且能够形成高分辨率、最小粗糙度和宽焦深度的良好图案轮廓。
• Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20100119970A1

  公开（公告）日：2010-05-13

  There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH 2 CF 2 SO 3 − H + (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

  揭示了一种抗性下层组合物，配置为在光刻中使用的多层抗性方法中使用，用于形成低于作为抗性上层膜的光刻胶层的一层，其中抗性下层组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，且抗性下层组合物至少包括用于通过在100°C或更高温度下加热生成由通式（1）表示的酸的热酸发生剂。 可以提供一种抗性下层组合物，用于多层抗性方法（特别是双层抗性方法和三层抗性方法），该组合物用于形成低于作为抗性上层膜的光刻胶层的一层，该组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，并且该组合物能够形成具有更高抗毒性效果并表现出对环境负荷较低的抗性下层膜、中间层膜等。
• Photoacid generators, chemically amplified resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20070292768A1

  公开（公告）日：2007-12-20

  A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

  一种光酸发生剂的化学式为（1）。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时，可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。