TIPSAntBeT | 1263302-41-5

• 分子结构分类: 有机化合物
• 英文名称: TIPSAntBeT
• 英文别名: 2,6-bis(benzo[b]thiophen-2-yl)-9,10-bis[(triisopropylsilanyl)ethynyl]anthracene；2,6-bis(benzo[b]thiophene-2'-yl)-9,10-bis(triisopropylsilylethynyl)anthracene
• CAS: 1263302-41-5
• 化学式: C₅₂H₅₈S₂Si₂
• 分子量: 803.336
• InChiKey: CAPUSZNYQCABCC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  16.9
• 重原子数：
  56.0
• 可旋转键数：
  8.0
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.35
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  2.0

反应信息

• 作为产物：
  描述：

  2,6-二溴蒽醌 在 四(三苯基膦)钯 、 正丁基锂 、 甲基三辛基氯化铵 、 sodium carbonate 作用下， 以 甲苯 为溶剂， 反应 40.0h， 生成 TIPSAntBeT
  参考文献：
  名称：

  아릴기가 치환된 안트라센 화합물, 그 제조 방법 및 이를 이용한 유기 박막 트랜지스터

  摘要：

  本发明涉及芳基取代的蒽化合物、其制备方法以及利用该化合物的有机薄膜晶体管。根据本发明的化合物与现有的n型或p型有机半导体材料相比，具有优异的结晶性和薄膜特性，能够在常温下的溶液工艺中实现大面积薄膜的形成，并能降低漏电流，从而改善有机薄膜晶体管的电学特性。

  公开号：

  KR101736920B1

文献信息

• Organic thin-film transistor properties and the structural relationships between various aromatic end-capped triisopropylsilylethynyl anthracene derivatives
  作者：Jong-Hwa Park、Dong Hoon Lee、Hoyoul Kong、Moo-Jin Park、In Hwan Jung、Chan Eon Park、Hong-Ku Shim

  DOI：10.1016/j.orgel.2010.01.024

  日期：2010.5

  We describe the preparation and characterization of single crystals and thin films composed of three new small molecules based on soluble triisopropylsilylethynyl (TIPS)substituted anthracene (TIPSAnt) for use in organic thin-film transistors (TFTs); the three molecules examined were TIPSAnt derivatives containing thiophene (TIPSAntT), benzothiophene (TIPSAntBeT), or phenyl thiophene (TIPSAntPT) end cappers. We elucidated the relationship between the molecular structures and TFT performances by measuring the thermal, optical, electrochemical, crystalline, and morphological properties of these molecules. TIPSAntPT was able to achieve a "bricklayer" type of molecular stacking structure, facilitated by the bulky phenyl thiophene substituents. This is the first report of a "bricklayer" stacking structure of triisopropylsilylethynyl anthracene derivatives. Among the three molecules, TIPSAntPT showed the highest TFT mobility, 0.063 cm(2)/Vs for the film state and 0.12 cm(2)/Vs for single crystals. By contrast, in the case of in TIPSAntBeT, the introduction of the rigid substituent group led to poor TFT device performance. TFT device performances could be explained in terms of thin-film morphology, investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. (C) 2010 Elsevier B. V. All rights reserved.