DMSO methylates a broad range of amines in the presence of formic acid, providing a novel, green and practical method for aminemethylation. The protocol also allows the one‐pot transformation of aromatic nitro compounds into dimethylated amines in the presence of a simple iron catalyst.
Synthesis and bactericidal activity of cationic surface-active agents containing an asymmetric nitrogen atom
作者:V. E. Limanov、S. B. Ivanov、T. B. Kruchenok、I. M. Tsvirova
DOI:10.1007/bf00776798
日期:1984.6
To separate the tertiary amines, the reaction mixture was treated with a mixture of acetic acid and acetic anhydride, excess of unreacted acetylatingagent was removed, and the tertiary amines were isolated in the form of hydrochlorides. Dry hydrogenchloride was passed through the solution of the reaction mixture in ether or petroleum ether, or the reaction mixture was dissolved in a minimal amount
由于所得叔胺的沸点与初始仲烷基甲胺的沸点相似,因此发现在反应结束时通过蒸馏分离这些化合物的常用方法是不合适的。为了分离叔胺,将反应混合物用乙酸和乙酸酐的混合物处理,除去过量的未反应的乙酰化剂,并以盐酸盐的形式分离叔胺。将干燥的氯化氢通过反应混合物的乙醚或石油醚溶液,或将反应混合物溶解在最少量的盐酸中,用乙醚或石油醚从水溶液中萃取除去杂质。通过用碱水溶液处理,然后蒸馏有机层,从盐酸盐中分离游离胺。新获得的叔胺的特征在 Tmble i 中给出,并且
Nematic liquid crystal compositions
申请人:Sharp Corporation
公开号:US04155872A1
公开(公告)日:1979-05-22
Nematic liquid crystal compositions containing at least one primary, secondary or tertiary aliphatic amine salt of aliphatic or aromatic monocarboxylic acids outstanding in the response speed and in the ability to produce a high degree of turbidity, low in the temperature dependence of conductivity (current) and having the long axes of the liquid crystal molecules uniformly oriented perpendicular to electrode base plates when filling the space between the base plates.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20140235796A1
公开(公告)日:2014-08-21
The invention provides a composition for forming a resist underlayer film including: as a component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds represented by the following general formula (A-1). There can be provided a composition for forming a resist underlayer film having etching selectivity relative to a conventional organic film and a silicon-containing film and favorable pattern adhesiveness relative to fine pattern even in a complicated patterning process.
R
1A
a1
R
2A
a2
R
3A
a3
Si(OR
0A
)
(4-a1-a2-a3)
(A-1)
Solvent free quaternization of tertiary amines with dimethylsulfate
申请人:HOECHST AKTIENGESELLSCHAFT
公开号:EP0684223A1
公开(公告)日:1995-11-29
A process for a high temperature, solvent free quaternization of certain tertiary amines using dimethylsulfate to produce quaternary ammonium methyl sulfates which may be used in fabric softening and other applications, is disclosed.