7-hydroxy-2-methyl-octan-4-one | 55882-35-4

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 7-hydroxy-2-methyl-octan-4-one
• 英文别名: 7-Hydroxy-2-methyloctan-4-one；7-hydroxy-2-methyloctan-4-one
• CAS: 55882-35-4
• 化学式: C₉H₁₈O₂
• 分子量: 158.241
• InChiKey: FTBXLQLILPNOOV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.3
• 重原子数：
  11
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  7-hydroxy-2-methyl-octan-4-one 在 sodium dichromate 、 硫酸 作用下， 以 水 为溶剂， 生成 7-methyl-octane-2,5-dione
  参考文献：
  名称：

  Hyperbasic Media: Metalation of Ketimines; a Fast Convenient Synthesis of 1,4-Diketones

  摘要：

  DOI：

  10.1055/s-1975-23722
• 作为产物：
  描述：

  在 盐酸 作用下， 反应 2.0h， 生成 7-hydroxy-2-methyl-octan-4-one
  参考文献：
  名称：

  The chemistry of .alpha.-silyl carbonyl compounds. 12. A synthesis of 4-oxo carboxylic acids, 4-oxo aldehydes, and 1,4-diketones from .gamma.-lactones

  摘要：

  DOI：

  10.1021/jo00361a019

文献信息

• Stereodivergent 1,3-difunctionalization of alkenes by charge relocation
  作者：Bogdan R. Brutiu、Giulia Iannelli、Margaux Riomet、Daniel Kaiser、Nuno Maulide

  DOI：10.1038/s41586-023-06938-0

  日期：2024.2.1

  7. Here we introduce a method for the direct 1,3-difunctionalization of alkenes, based on a concept termed ‘charge relocation’, which enables stereodivergent access to 1,3-difunctionalized products of either syn- or anti-configuration from unactivated alkenes, without the need for directing groups or stabilizing features. The usefulness of the approach is demonstrated in the synthesis of the pulmonary

  烯烃是化学中不可或缺的原料。烯烃两个碳的官能团化 — 1,2-双官能团化 — 是全世界化学课程的一部分1。尽管已经报道了远端位置的双功能化2,3,4，但它通常依赖于具有定向基团和/或稳定特征的设计底物，所有这些都决定了键形成的最终部位5,6,7。在这里，我们介绍了一种烯烃直接 1,3-二官能化的方法，该方法基于称为“电荷重定位”的概念，该方法能够从未活化的烯烃中立体发散地获得 1,3-二官能化产物的同构型或反构型，而无需定向基团或稳定特征。该方法的有用性在肺毒素 4-异吡喃醇及其衍生物的合成中得到证明。
• THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3657254A1

  公开（公告）日：2020-05-27

  The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

  本发明是一种热固性含硅材料，它含有一个或多个如下通式（Sx-1）所示的重复单元、如下通式（Sx-2）所示的重复单元和如下通式（Sx-3）所示的部分结构： 其中 R1 代表含碘有机基团；R2 和 R3 各自独立地与 R1、氢原子或具有 1 至 30 个碳原子的一价有机基团相同。本发明提供了：一种用于形成抗蚀剂底层薄膜的含硅热固性材料，该材料能够有助于提高上层抗蚀剂的灵敏度，同时使其低功耗不降低；一种用于形成含硅抗蚀剂底层薄膜的组合物，该组合物含有该含硅热固性材料；以及一种使用该组合物的图案化工艺。
• THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3680275A1

  公开（公告）日：2020-07-15

  A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

  热固性含硅化合物包含一个或多个结构单元，结构单元的通式如下（Sx-1）、（Sx-2）和（Sx-3）： 其中，R1 代表一个一价有机基团，该基团包含一个可选具有取代基的苯基和一个具有 3 至 10 个碳原子的非芳香环；R2、R3 分别代表 R1 或一个具有 1 至 30 个碳原子的一价有机基团。因此，本发明提供了一种可用于含硅抗蚀剂底层薄膜材料的热固性含硅化合物，该化合物能够实现既具有抗碱性显影剂性能又能在不含过氧化氢的碱性剥离液中提高溶解性的矛盾特性。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3686256A1

  公开（公告）日：2020-07-29

  A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents a divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R103 represents a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with a sulfur atom in the formula; and L104 represents a single bond or a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom. Thus, the present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed in a chemically amplified resist that uses an acid as a catalyst.

  一种用于形成含硅抗蚀剂底层薄膜的组合物至少包含：一种或多种如下通式所示的化合物（P-0）；以及一种可热交联的聚硅氧烷（Sx）、 其中 R100 代表被一个或多个氟原子取代的二价有机基团；R101 和 R102 各自独立地代表具有 1 至 20 个碳原子的线性、支链或环状一价烃基团，可选择被一个杂原子取代或被一个杂原子插入；R103 代表具有 1 至 20 个碳原子的线性、支链或环状二价烃基团，可选择被一个杂原子取代或被一个杂原子插入；R101 和 R102，或 R101 和 R103，可选地相互键合，以形成式中带有硫原子的环；以及 L104 代表单键或具有 1 至 20 个碳原子的线性、支链或环状二价烃基，可选地被杂原子取代或可选地被杂原子夹杂。因此，本发明提供了一种抗蚀剂底层薄膜，能够改善在使用酸作为催化剂的化学放大抗蚀剂中形成的精细图案的 LWR 和 CDU。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP4020081A1

  公开（公告）日：2022-06-29

  The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a resist underlayer film having favorable adhesiveness to resist patterns regardless of whether in negative development or positive development, and also having favorable adhesiveness to finer patterns as in EUV photo-exposure; a patterning process; and a silicon compound.

  本发明是一种用于形成含硅光刻胶底层膜的组合物，其中含有一种或多种硅化合物（A-1）的水解产物和水解缩合物中的一种或两种，如下通式（1）所示。这就提供了：一种用于形成含硅抗蚀剂底层膜的组合物，使用该组合物可以形成抗蚀剂底层膜，无论在负显影还是正显影中，该抗蚀剂底层膜都对抗蚀剂图案具有良好的附着性，而且在超紫外光曝光中，该抗蚀剂底层膜还对更精细的图案具有良好的附着性；一种图案化工艺；以及一种硅化合物。