methyl (3R,4S)-3-hydroxy-2-methylidene-4-[(2-methylpropan-2-yl)oxycarbonylamino]-5-phenylpentanoate | 883907-75-3

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: methyl (3R,4S)-3-hydroxy-2-methylidene-4-[(2-methylpropan-2-yl)oxycarbonylamino]-5-phenylpentanoate
• CAS: 883907-75-3
• 化学式: C₁₈H₂₅NO₅
• 分子量: 335.4
• InChiKey: USNXBWVFDKVETN-LSDHHAIUSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.6
• 重原子数：
  24
• 可旋转键数：
  9
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.44
• 拓扑面积：
  84.9
• 氢给体数：
  2
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  methyl (3R,4S)-3-hydroxy-2-methylidene-4-[(2-methylpropan-2-yl)oxycarbonylamino]-5-phenylpentanoate 、 2,2-二甲氧基丙烷 在 camphor-10-sulfonic acid 作用下， 反应 48.0h， 以91%的产率得到tert-butyl (4S,5R)-4-benzyl-5-(3-methoxy-3-oxoprop-1-en-2-yl)-2,2-dimethyl-1,3-oxazolidine-3-carboxylate
  参考文献：
  名称：

  Sheet resistance of GaAs conductive layers isolated by proton irradiation

  摘要：

  A simple null charge model was employed to describe GaAs sheet resistance evolution as a function of proton implantation fluence using a previous knowledge of the irradiation created defect characteristics. In the specific case of GaAs irradiated with protons, three different irradiation related defect schemes were analyzed. Data obtained by both n-type and p-type majority carrier DLTS should be used together to give correct information about compensating deep centers. For a good estimation of isolation process by ion irradiation, not only the defects energy levels and introduction rates must be obtained, but also the corresponding charge transitions should be known. (c) 2005 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.nimb.2005.11.149
• 作为产物：
  描述：

  二碳酸二叔丁酯 在 三乙烯二胺 、 二异丁基氢化铝 、 碳酸氢钠 作用下， 以 二氯甲烷 为溶剂， 反应 40.0h， 生成 methyl (3R,4S)-3-hydroxy-2-methylidene-4-[(2-methylpropan-2-yl)oxycarbonylamino]-5-phenylpentanoate
  参考文献：
  名称：

  Sheet resistance of GaAs conductive layers isolated by proton irradiation

  摘要：

  A simple null charge model was employed to describe GaAs sheet resistance evolution as a function of proton implantation fluence using a previous knowledge of the irradiation created defect characteristics. In the specific case of GaAs irradiated with protons, three different irradiation related defect schemes were analyzed. Data obtained by both n-type and p-type majority carrier DLTS should be used together to give correct information about compensating deep centers. For a good estimation of isolation process by ion irradiation, not only the defects energy levels and introduction rates must be obtained, but also the corresponding charge transitions should be known. (c) 2005 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.nimb.2005.11.149