作者:Dennis J. Clouthier、Warren W. Harper、Chad M. Klusek、Tony C. Smith
DOI:10.1063/1.477429
日期:1998.11.8
The à 1A″–X̃ 1A′ spectra of jet-cooled HSiI and DSiI have been studied using the pulsed discharge technique, using H3SiI and D3SiI as precursors. The excited state vibrational frequencies have been determined and the literature value of ν1′ substantially revised. Although a reliable excited state equilibrium structure was unattainable, the rotational constants of the 000 bands gave the structural parameters r0″(Si–I)=2.463(1) Å, r0″(Si–H)=1.534(1) Å, θ0″(HSiI)=92.4(1)°, r0′(Si–I)=2.436(1) Å, r0′(Si–H)=1.515(5) Å, and θ0′(HSiI)=114.9(2)°. The radiative lifetime of the 000 band has been measured to be 1230±30 ns. Trends in the structural parameters, vibrational frequencies, and their changes on electronic excitation for the monohalosilylenes have been discussed.