申请人:Sumitomo Chemical Company, Limited
公开号:EP2320467A1
公开(公告)日:2011-05-11
The subject of the present invention is to provide an organic thin film transistor with a small hysteresis. The means for solving the subject is a resin composition for an organic thin film transistor gate insulating layer comprising (A) a macromolecule that comprises at least one repeating unit selected from the group consisting of repeating units represented by Formula (1), repeating units represented by Formula (1'), and repeating units represented by Formula (2) and contains two or more first functional groups in its molecule, wherein the first functional group is a functional group that generates, by the action of electromagnetic waves or heat, a second functional group that reacts with active hydrogen, and (B) at least one compound selected from the group consisting of low-molecular compounds containing two or more active hydrogens in each molecule and macromolecules containing two or more active hydrogens in each molecule.
本发明的目的是提供一种滞后小的有机薄膜晶体管。解决该课题的方法是一种用于有机薄膜晶体管栅极绝缘层的树脂组合物,该树脂组合物包括 (A) 由至少一个重复单元组成的大分子,该重复单元选自由式(1)表示的重复单元、式(1')表示的重复单元和式(2)表示的重复单元组成的组,并在其分子中含有两个或两个以上的第一官能团、其中第一官能团是在电磁波或热的作用下产生与活性氢反应的第二官能团的官能团,以及 (B) 至少一种化合物,选自由每个分子中含有两个或两个以上活性氢的低分子化合物和每个分子中含有两个或两个以上活性氢的大分子组成的组。