2,3,9,10-Tetrabromo-6,13-bis(2,2,3,3,4,4,4-heptafluorobutyl)-6,13-diazatetracyclo[6.6.2.04,16.011,15]hexadeca-1,3,8,10,15-pentaene-5,7,12,14-tetrone | 1338807-82-1

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吡啶及其衍生物
• 英文名称: 2,3,9,10-Tetrabromo-6,13-bis(2,2,3,3,4,4,4-heptafluorobutyl)-6,13-diazatetracyclo[6.6.2.04,16.011,15]hexadeca-1,3,8,10,15-pentaene-5,7,12,14-tetrone
• CAS: 1338807-82-1
• 化学式: C₂₂H₄Br₄F₁₄N₂O₄
• 分子量: 945.878
• InChiKey: TUDYJUYVGXHRDF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  8.8
• 重原子数：
  46
• 可旋转键数：
  6
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.36
• 拓扑面积：
  74.8
• 氢给体数：
  0
• 氢受体数：
  18

反应信息

• 作为反应物：
  描述：

  3,9-十二烷二炔 、 2,3,9,10-Tetrabromo-6,13-bis(2,2,3,3,4,4,4-heptafluorobutyl)-6,13-diazatetracyclo[6.6.2.04,16.011,15]hexadeca-1,3,8,10,15-pentaene-5,7,12,14-tetrone 在 正丁基锂 、 二氯二茂锆 、 copper(l) chloride 作用下， 以 四氢呋喃 、 正己烷 为溶剂， 反应 6.0h， 以35%的产率得到N,N'-Bis(2,2,3,3,4,4,4-heptafluorobutyl)-5,8,13,16-tetraethyl-1,2,3,4,9,10,11,12-octahydrohexacene-6,7:14,15-bis(dicarbimide)
  参考文献：
  名称：

  One-Pot Synthesis of Stable NIR Tetracene Diimides via Double Cross-Coupling

  摘要：

  Tetracene tetracarboxylic diimides have been synthesized based on direct double ring extension of electrondeficient naphthalene diimides involving metallacyclopentadienes. Atomic structure and electronic transitions responsible for their NIR absorption spectra are investigated with quantum-chemical calculations. In light of their unique structure and admirable photophysical and electronic properties, this new molecular skeleton is promising candidate for n-type semiconductors.

  DOI：

  10.1021/ja207630a

文献信息

• TETRACENE TETRACARBOXYLIC DIIMIDES AND THEIR PREPARATION
  申请人：INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES

  公开号：US20140370652A1

  公开（公告）日：2014-12-18

  A new family of tetracene tetracarboxylic diimides is provided. These ones can made by reacting a 9-stannafluorene with a tetrabromo compound including a tetracene tetracarboxylic diimide core. They can be used as n-type electron-transporting materials in electronic devices such as n-channel field-effect transistors. They exhibit excellent air-stability and do not cause parasite injections of holes.