Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors
present compounds bear the branched N-alkyl substituents with the carbon atom numbers from 12 to 24, which guarantees good material solubility. The solution-processed, bottom-gate organicthinfilmtransistors based on new compounds 3−12 operate well in air with the electron mobility ranging from ∼10−6 to 0.26 cm2 V−1 s−1, depending on the nature of the branched N-alkyl substituent and the π-backbone
芯膨胀的萘二酰亚胺的四个家族(NDI)衍生物,设计并合成,即,NDI-DTYM2(1 - 7,其中1和2以前报道),NDI-DTDCN2(8和9),NDI-DTYCA2(10和11),以及NDI-DCT2(12),其中NDI核融合了两个2-(1,3-二硫醇-2-亚甲基)丙二腈(DTYM)基团,两个1,4-二硫氨酸-2,3-二碳腈(DTDCN)基团,两个烷基2-(1 ,3-二硫基-2-亚烷基)氰基乙酸酯(DTYCA)基团和两个2,3-二氰基噻吩(DCT)基团。本发明化合物的NDI核心带有碳原子数为12至24的支链N-烷基取代基,这保证了良好的材料溶解性。的溶液处理,底栅有机薄膜基于新化合物晶体管3 - 12与空气中的电子迁移率范围为〜10操作以及-6至0.26厘米2 V -1小号-1,取决于的性质支链的N-烷基取代基和π-主链结构。