A main object of the present invention is to provide a TFT substrate having excellent switching characteristics. The object is attained by providing a thin film transistor substrate comprising: a substrate, and a thin film transistor having an oxide semiconductor layer that is formed on the substrate and is formed from an oxide semiconductor, and a semiconductor layer-adjoining insulating layer formed to be in contact with the oxide semiconductor layer, wherein at least one semiconductor layer-adjoining insulating layer included in the thin film transistor is a photosensitive polyimide insulating layer formed by using a photosensitive polyimide resin composition.
本发明的主要目的是提供一种具有优异开关特性的TFT基板。该目标通过提供一种薄膜晶体管基板来实现,该基板包括:基板和薄膜晶体管,所述薄膜晶体管具有在基板上形成的氧化物半导体层,该氧化物半导体层由氧化物半导体形成,并且与氧化物半导体层接触的半导体层相邻的绝缘层,其中,在薄膜晶体管中包括的至少一个半导体层相邻的绝缘层是使用光敏聚
酰亚胺树脂组合物形成的光敏聚
酰亚胺绝缘层来实现的。