本文公开了以硫酸铁( III )为再氧化剂的活性末端烯烃的高效钯催化抗马尔科夫尼科夫氧化缩醛化反应。该方法需要温和的反应条件,并显示出对抗马尔科夫尼科夫产物的高区域选择性以及与多种官能团的相容性。硫酸铁( III ) 是该方法中使用的唯一再氧化剂。各种烯烃,如乙烯基芳烃、芳基烯丙基醚、丙烯酸芳基或苄基丙烯酸酯和高烯丙醇都反应良好,提供抗马尔科夫尼科夫缩醛,其中一些代表正交官能化的 1,3-和 1,4-二氧化化合物。
An efficient Co-catalyzed 1,4-addition reaction of alkyl/aryl triflates and tosylates with activated alkenes is described. In this reaction, air-stable cobalt(II) complex, mild reducing agent Zn and simple proton source (H2O) are used. A radical mechanism for the addition of alkyl tosylates to activated alkenes is likely involved.
A direct route to six and seven membered lactones <i>via</i> γ-C(sp<sup>3</sup>)–H activation: a simple protocol to build molecular complexity
作者:Jayabrata Das、Pravas Dolui、Wajid Ali、Jyoti Prasad Biswas、Hediyala B. Chandrashekar、Gaurav Prakash、Debabrata Maiti
DOI:10.1039/d0sc03144e
日期:——
Lactones comprise a class of valuable compounds having biological as well as industrial importance. Development of a methodology to synthesize such molecules directly from readily available materials such as aliphatic carboxylic acid is highly desirable. Herein, we have reported synthesis of δ-lactones and ε-lactones via selective γ-C(sp3)–H activation. The γ-C–H bondcontaining aliphatic carboxylic
CURABLE COMPOSITION FOR IMPRINTS, PATTERNING METHOD AND PATTERN
申请人:Kodama Kunihiko
公开号:US20110236595A1
公开(公告)日:2011-09-29
Provided is a curable composition for imprints having good patternability and dry etching resistance. Disclosed is a curable composition for imprints comprising a polymerizable monomer (Ax) having a substituent having an aromatic group and having a molecular weight of 100 or more, and a photopolymerization initiator.
Conjugate addition is among the most important synthetic protocols for constructing carbon skeletons and is widely used to synthesize natural products and drugs. However, asymmetric catalysis studies have mainly focused on constructing stereogenic centers arising from conjugate alkenes. Here, we report the first photoinduced cobalt-catalyzed dynamic kinetic reductive conjugate addition reaction that
Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition
申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
公开号:US10042258B2
公开(公告)日:2018-08-07
This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.