Phase-sensitive synchrotron radiation (SR) radiography was combined with x-ray diffraction topography to study structural defects of SiC crystals. The particular bulk SiC crystals examined had a low micropipe density and a hexagonal habitus composed of prismatic, pyramidal, and basal faces well developed. X-ray diffraction topography images of the sliced (0001) wafers, which were formed due to the complex lattice distortions associated with defective boundaries, demonstrated the existence of two-dimensional defective boundaries in the radial direction, normal to the (0001) planes. In particular, those parallel to the 〈1120〉 directions extended rather far from the seed. On the other hand, by phase-sensitive SR radiography the effect of micropipe collection was detected. Micropipes grouped mostly in the vicinities of the defective boundaries but rarely appeared between groups. Some general remarks about possible reasons for the development of such peculiar defect structures were made.
相敏同步辐射(SR)射线照相术与 X 射线衍射拓扑图相结合,研究了碳化硅晶体的结构缺陷。所研究的特定块状碳化硅晶体具有较低的微管密度和由棱柱面、金字塔面和基底面组成的发育良好的六边形习性。切片 (0001) 硅片的 X 射线衍射拓扑图像是由于与缺陷边界相关的复杂晶格畸变而形成的,它表明在 (0001) 平面的法线径向存在二维缺陷边界。特别是,那些平行于〈1120〉方向的缺陷边界离种子相当远。另一方面,通过相敏 SR 射线照相术,可以检测到微管聚集的影响。微管主要聚集在缺陷边界附近,但很少出现在群组之间。对形成这种特殊缺陷结构的可能原因进行了一些一般性评论。