申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20180275516A1
公开(公告)日:2018-09-27
The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.
The present invention was accomplished by a sulfonium salt including an anion and a cation, the cation having a partial structure represented by the following general formula (1), except for a sulfonium salt having a cation represented by the following general formula (1′),
本发明提供了一种亚砜盐,能够提供在光刻工艺中使用高能光束作为光源时具有较少缺陷的光刻胶组合物,并通过控制酸扩散在光刻性能方面表现出色。本发明通过包括阴离子和阳离子的亚砜盐实现,其中阳离子具有以下通用式(1)所表示的部分结构,除了具有以下通用式(1')所表示的阳离子的亚砜盐。