1-(1-ethoxy)ethoxy-4-isopropylbenzene | 469858-90-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1-(1-ethoxy)ethoxy-4-isopropylbenzene
• 英文别名: 1-(1-ethoxyethoxy)-4-propan-2-ylbenzene
• CAS: 469858-90-0
• 化学式: C₁₃H₂₀O₂
• 分子量: 208.301
• InChiKey: ATBOOPHPGQNHSL-UHFFFAOYSA-N

物化性质

• 沸点：
  280.1±33.0 °C(Predicted)
• 密度：
  0.947±0.06 g/cm3(Temp: 20 °C; Press: 760 Torr)(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  15
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  4-异丙基苯酚 、 乙烯基乙醚 在 盐酸 、 碳酸氢钠 作用下， 以 乙酸乙酯 为溶剂， 生成 1-(1-ethoxy)ethoxy-4-isopropylbenzene
  参考文献：
  名称：

  Optically active compound and photosensitive resin composition

  摘要：

  一种光活性化合物与光敏剂结合使用，由以下公式（1）表示： A −[( J ) m −( X-Pro )] n (1) 其中，A代表至少包括一种从烃基和杂环基中选择的疏水基的疏水单元，J代表连接基团，X-Pro代表由光照可去除的保护基团Pro保护的亲水基团，m代表0或1，n代表不少于1的整数。 保护基团Pro可以与光敏剂（特别是光酸发生剂）一起通过光照可去除，也可以是疏水保护基团。亲水基团可以是羟基或羧基。光活性化合物对短波长光源具有很高的敏感性，用于光刻应用，因此，该光活性化合物有利于形成具有高分辨率的图案。

  公开号：

  US20030211421A1

文献信息

• SALT, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20200363720A1

  公开（公告）日：2020-11-19

  Disclosed are a salt represented by formula (I) and a resist composition including the same:

  公开了一种由化学式（I）表示的盐和包括该盐的抗蚀组合物：
• OPTICALLY ACTIVE COMPOUND AND PHOTOSENSITIVE RESIN COMPOSITION
  申请人：Kansai Research Institute, Inc.

  公开号：EP1375463A1

  公开（公告）日：2004-01-02

  A photoactive compound is used in combination with a photosensitizer, represented by the following formula (1):         A-[(J)m-(X-Pro)]n     (1)    wherein A represents a hydrophobic unit comprising at least one kind of hydrophobic groups selected from a hydrocarbon group and a heterocyclic group, J represents a connecting group, X-Pro represents a hydrophilic group protected by a protective group Pro which is removable by light exposure, m represents 0 or 1, and n represents an integer of not less than 1. The protective group Pro may be removable by light exposure in association with the photosensitizer (especially, a photo acid generator), or may be a hydrophobic protective group. The hydrophilic group may be a hydroxyl group or a carboxyl group. The photoactive compound has high sensitivity to a light source of short wavelength beams, for resist application, therefore, the photoactive compound is advantageously used for forming a pattern with high resolution.

  光活性化合物与光敏剂结合使用，光敏剂由下式（1）表示： A-[(J)m-(X-Pro)]n (1) 其中 A 代表疏水单元，包括至少一种选自烃基和杂环基的疏水基团；J 代表连接基团；X-Pro 代表亲水基团，该亲水基团受保护基团 Pro 的保护，该保护基团可通过光照去除；m 代表 0 或 1；n 代表不小于 1 的整数。 保护基 Pro 可以通过与光敏剂（特别是光酸发生器）一起进行光照射而去除，也可以是疏水保护基。亲水基团可以是羟基或羧基。光活性化合物对短波长光束的光源具有很高的灵敏度，因此在抗蚀剂应用中，光活性化合物可用于形成具有高分辨率的图案。
• RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：Sumitomo Chemical Company, Limited

  公开号：EP3556783A1

  公开（公告）日：2019-10-23

  Disclosed is a resin comprising a structural unit derived from a compound represented by formula (I) and a structural unit having an acid-labile group: wherein R1 represents a hydrocarbon group which may have a substituent, R2 each independently represent an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom, Ar represents an aromatic hydrocarbon group which may have a substituent, L1 represents a group represented by formula (L1-1), etc., L11, L13, L15 and L17 each independently represent an alkanediyl group, L12, L14, L16 and L18 each independently represent -O-, -CO-, -CO-O-, etc., * and ** are bonds, and ** represents a bond to an iodine atom.

  本发明公开了一种树脂，该树脂包含由式 (I) 所示化合物衍生的结构单元和具有酸亲和基的结构单元： 其中 R1 代表可具有取代基的烃基；R2 各自独立地代表可具有卤素原子、氢原子或卤素原子的烷基；Ar 代表可具有取代基的芳香烃基；L1 代表式 (L1-1) 所代表的基团等、L11、L13、L15和L17各自独立地代表烷二基，L12、L14、L16和L18各自独立地代表-O-、-CO-、-CO-O-等，*和**为键，**代表与碘原子的键。
• COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：Sumitomo Chemical Company, Limited

  公开号：EP3581594B1

  公开（公告）日：2021-12-29
• PROCESS FOR PRODUCING PHOTORESIST PATTERN AND PHOTORESIST COMPOSITION
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20170329224A1

  公开（公告）日：2017-11-16

  A process for producing a photoresist pattern comprising steps (1) to (5); (1) applying a photoresist composition onto a substrate, said photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group; (2) drying the applied composition to form a composition layer; (3) exposing the composition layer; (4) heating the exposed composition layer; and (5) developing the heated composition layer with a developer which comprises butyl acetate, wherein a distance of Hansen solubility parameters between the resin and butyl acetate is from 3.3 to 4.3, the distance is calculated from formula (1): R =(4×(δ d R −15.8) 2 +(δ p R −3.7) 2 +(δ h R −6.3) 2 ) 1/2 (1) in which δd R represents a dispersion parameter of the resin, δp R represents a polarity parameter of the resin, δh R represents a hydrogen bonding parameter of the resin, and R represents the distance, and a film retention ratio of the photoresist pattern relative to the composition layer is adjusted to 65% or more.