3-(dichloromethyl)benzonitrile | 93632-91-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 3-(dichloromethyl)benzonitrile
• 英文别名: 3-dichloromethyl-benzonitrile；3¹.3¹-Dichlor-m-tolunitril；3-Dichlormethyl-benzonitril；3-Cyan-benzalchlorid；m-Cyan-benzalchlorid
• CAS: 93632-91-8
• 化学式: C₈H₅Cl₂N
• 分子量: 186.04
• InChiKey: FFISZUWGEVCWDO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  11
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  23.8
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  3-(dichloromethyl)benzonitrile 在 三氯化铝 、 苯 作用下， 生成 3-benzhydryl-benzoic acid
  参考文献：
  名称：

  US2655504

  摘要：

  公开号：
• 作为产物：
  描述：

  间甲基苯腈 在 氯 作用下， 生成 3-(dichloromethyl)benzonitrile
  参考文献：
  名称：

  Reinglass, Chemische Berichte, 1891, vol. 24, p. 2422

  摘要：

  DOI：

文献信息

• Synthesis of Aryldihalomethanes by Denitrogenative Dihalogenation of Benzaldehyde Hydrazones
  作者：Zhensheng Zhao、Kaivalya G. Kulkarni、Graham K. Murphy

  DOI：10.1002/adsc.201700393

  日期：2017.7.3

  denitrogenative dihalogenation reaction of phenyldiazomethanes in which the hypervalent iodine reagents PhICl2 and TolIF2 act as surrogates for elemental chlorine and fluorine. Halogen transfer from iodane to aryldiazomethane is described, as is a tandem oxidative dihalogenation reaction between iodane and hydrazone. This is the first use of non‐α‐stabilized diazo compounds in this reaction, which provided an

  我们报告了苯基重氮甲烷的脱氮二卤化反应，其中高价碘试剂PhICl 2和TolIF 2充当元素氯和氟的替代物。描述了从碘到卤素重氮甲烷的卤素转移，以及碘和之间的串联氧化二卤化反应。这是此反应中首次使用非α稳定的重氮化合物，可有效合成芳基二氟甲烷（ArCHF 2）和芳基二氯甲烷（ArCHCl 2）衍生物。
• CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
  申请人：Lee Wai Mun

  公开号：US20090130849A1

  公开（公告）日：2009-05-21

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

  本文描述了一种化学机械平整化（或其他抛光）的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率，包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
• METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
  申请人：Lee Wai Mun

  公开号：US20100043823A1

  公开（公告）日：2010-02-25

  The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

  本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法，包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分，如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
• COMPOSITION COMPRISING CHELATING AGENTS CONTAINING AMIDOXIME COMPOUNDS
  申请人：Lee Wai Mun

  公开号：US20100105595A1

  公开（公告）日：2010-04-29

  The present invention is a novel aqueous cleaning solution for use in semiconductor front end of the line (FEOL) manufacturing process wherein the cleaning solution comprises at least one amidoxime compound.

  本发明是一种用于半导体前端制造过程中的新型水性清洗溶液，其中清洗溶液包含至少一种酰胺肟化合物。
• METHODS OF POST CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING USING AMIDOXIME COMPOSITIONS
  申请人：Lee Wai Mun

  公开号：US20090133716A1

  公开（公告）日：2009-05-28

  The invention relates to a method for the removal of residues and contaminants from metal or dielectric surfaces and to a method for chemical mechanical polishing of a copper or aluminum surface. The methods of the invention include using an aqueous amidoxime complex agent. Optionally, the pH of the solution can be adjusted with an acid or base. The method includes applying the above composition to the copper or aluminum surface and polishing the surface in the presence of the composition.

  本发明涉及一种从金属或介电表面去除残留物和污染物的方法，以及一种化学机械抛光铜或铝表面的方法。本发明的方法包括使用水溶性的酰胺肟络合剂。可选地，可以使用酸或碱调整溶液的pH值。该方法包括将上述组合物应用于铜或铝表面，并在组合物存在的情况下抛光表面。