The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.
本发明涉及一种通过掺杂掺杂剂制备掺杂有机半导体材料的工艺,掺杂有机半导体材料具有更高的电荷载流子密度和有效的电荷载流子迁移率,在该工艺中,将掺杂剂混合到有机半导体材料中后,氢、
一氧化碳、氮或羟基自由基被分裂,至少一个电子被转移到半导体材料中或从半导体材料中转移出来。该工艺的特点是使用不带电的有机化合物作为掺杂剂。掺杂有机半导体材料可通过其中一种工艺获得。这种半导体材料的特点是掺杂层含有至少一种有机化合物的阳离子,而不带电的有机化合物在空气中不稳定。