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5-氯萘-1-腈 | 73399-85-6

中文名称
5-氯萘-1-腈
中文别名
——
英文名称
5-chloronaphthalene-1-carbonitrile
英文别名
5-chloro-1-naphthonitrile;5-chloro-[1]naphthonitrile;5-Chlor-[1]naphthonitril;5-Chlornaphthalin-1-carbonitril
5-氯萘-1-腈化学式
CAS
73399-85-6
化学式
C11H6ClN
mdl
——
分子量
187.628
InChiKey
IDINQIUTUSXCIY-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.8
  • 重原子数:
    13
  • 可旋转键数:
    0
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    23.8
  • 氢给体数:
    0
  • 氢受体数:
    1

SDS

SDS:a81523a298b676012e5b28a9112dfb17
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上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    5-氯萘-1-腈二异丁基氢化铝 作用下, 以 甲苯 为溶剂, 反应 2.0h, 以91%的产率得到5-氯萘-1-甲醛
    参考文献:
    名称:
    Synthesis and structure-activity relationships of naphthalene-substituted derivatives of the allylamine antimycotic terbinafine
    摘要:
    Derivatives of the allylamine antimycotic terbinafine (1) with varied substitution at the naphthalene ring system have been prepared, and their antifungal activity has been evaluated. In general, the potency is strongly dependent on the bulkiness of the substituent. Only hydrogen or in some cases fluorine are tolerated as substituents at positions 2-4 and 6-8 of the naphthalene moiety, whereas 5-substituents may be larger in size (F, Cl, Br, Me). Derivatives with fluorine at positions 3, 5, and 7 or chlorine at position 5 showed enhanced activity against yeasts relative to 1. This increase in sensitivity could be intensified by simultaneous introduction of two fluoro substituents at positions 5 and 7. Compound 7q demonstrated 8-to 16-fold improved potency against Aspergillus fumigatus, Candida albicans, and Candida parapsilosis.
    DOI:
    10.1021/jm00071a011
  • 作为产物:
    描述:
    氰基萘二硫化碳 作用下, 生成 5-氯萘-1-腈
    参考文献:
    名称:
    Ekstrand, Journal fur praktische Chemie (Leipzig 1954), 1888, vol. <2> 38, p. 161
    摘要:
    DOI:
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文献信息

  • MTA-Cooperative PRMT5 Inhibitors
    申请人:Mirati Therapeutics, Inc.
    公开号:US20210078994A1
    公开(公告)日:2021-03-18
    The present invention relates to compounds that inhibit Protein Arginine N-Methyl Transferase 5 (PRMT5) activity. In particular, the present invention relates to compounds, pharmaceutical compositions and methods of use, such as methods of treating cancer using the compounds and pharmaceutical compositions of the present invention.
    本发明涉及抑制蛋白精氨酸N-甲基转移酶5(PRMT5)活性的化合物。具体而言,本发明涉及化合物、药物组合物和使用方法,例如使用本发明的化合物和药物组合物治疗癌症的方法。
  • Dihydroimidazothiazole Derivatives
    申请人:Barba Oscar
    公开号:US20090221645A1
    公开(公告)日:2009-09-03
    Compounds of formula (I) or pharmaceutically acceptable salts thereof, exhibit 5-HT 1A agonism in addition to noradrenaline reuptake inhibition and optionally also 5-HT reuptake inhibition are useful for the treatment of obesity.
    式(I)的化合物或其药学上可接受的盐,除了去甲肾上腺素再摄取抑制外,还表现出5-HT1A受体激动作用,可选地还具有5-HT再摄取抑制作用,适用于肥胖症的治疗。
  • CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
    申请人:Lee Wai Mun
    公开号:US20090130849A1
    公开(公告)日:2009-05-21
    A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.
    本文描述了一种化学机械平整化(或其他抛光)的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率,包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
  • METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
    申请人:Lee Wai Mun
    公开号:US20100043823A1
    公开(公告)日:2010-02-25
    The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.
    本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法,包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分,如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
  • COMPOSITION COMPRISING CHELATING AGENTS CONTAINING AMIDOXIME COMPOUNDS
    申请人:Lee Wai Mun
    公开号:US20100105595A1
    公开(公告)日:2010-04-29
    The present invention is a novel aqueous cleaning solution for use in semiconductor front end of the line (FEOL) manufacturing process wherein the cleaning solution comprises at least one amidoxime compound.
    本发明是一种用于半导体前端制造过程中的新型水性清洗溶液,其中清洗溶液包含至少一种酰胺肟化合物。
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