Thermal decomposition of tetramethylsilane and tetramethylgermane by flash pyrolysis vacuum ultraviolet photoionization time-of-flight mass spectrometry
作者:Jessy M. Lemieux、Jingsong Zhang
DOI:10.1016/j.ijms.2014.09.006
日期:2014.11
process in TMS involving loss of H atom from Si(CH 3 ) 3 followed by elimination of H2 to form SiC 3 H 8 , SiC 3 H 6 , and SiC 3 H 4 was also identified. Sequential loss of the third and fourth methyl radical with significant formation of Ge and Ge 2 was observed in the TMG pyrolysis. Loss of a third methyl radical in the TMS pyrolysis was not significant, while Si and SiC products were possibly produced
摘要 使用快速热解真空紫外单光子电离飞行时间质谱 (VUV-SPI-TOFMS) 在 20-100 μs 的短时间尺度上研究了四甲基硅烷 (TMS) 和四甲基锗烷 (TMG) 的热分解。TMS 和 TMG 的初级分解通过失去甲基自由基而发生,分别形成 Si(CH 3 ) 3 和 Ge(CH 3 ) 3 。Si(CH 3 ) 3 和Ge(CH 3 ) 3 自由基都经历了第二个甲基自由基的二次损失,分别形成:Si(CH 3 ) 2 和:Ge(CH 3 ) 2 。之前未观察到的 TMS 二次分解过程包括从 Si(CH 3 ) 3 失去 H 原子,然后消除 H 2 以形成 SiC 3 H 8 、SiC 3 H 6 和 SiC 3 H 4 。在 TMG 热解中观察到第三个和第四个甲基自由基的连续损失以及 Ge 和 Ge 2 的显着形成。TMS 热解中第三个甲基自由基的损失并不显着,而可能会产生 Si
Shock Tube Study on the Reaction of Si Atoms with CH3 with Respect to SiC Formation
作者:A. Kunz、K.A. Bhaskaran、R. Roth
DOI:10.1524/zpch.2001.215.6.811
日期:2001.1.1
The reaction kinetics of ground state Si atoms was studied behind reflected shock waves in the presence of excess CH