1-[溴(二氟)甲基]-2,3,4,5,6-五氟苯 | 35523-39-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 1-[溴(二氟)甲基]-2,3,4,5,6-五氟苯
• 英文名称: heptafluorobenzyl bromide
• 英文别名: perfluorobenzyl bromide；Perfluorbenzylbromid；Heptafluorbenzylbromid；1-[Bromo(difluoro)methyl]-2,3,4,5,6-pentafluorobenzene
• CAS: 35523-39-8
• 化学式: C₇BrF₇
• 分子量: 296.97
• InChiKey: PWGMNZOMRHKQFY-UHFFFAOYSA-N

物化性质

• 沸点：
  160.0±35.0 °C(Predicted)
• 密度：
  1.957±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.7
• 重原子数：
  15
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.14
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为反应物：
  描述：

  1-[溴(二氟)甲基]-2,3,4,5,6-五氟苯 在 碘 、 镉 作用下， 生成 七氟苄碘
  参考文献：
  名称：

  全氟苄基镉和铜试剂的制备，稳定性和反应性

  摘要：

  在室温下，全氟苄基溴容易与酸洗过的镉粉末在DMF中反应，生成F-苄基镉试剂。所述的复分解˚F -benzylcadmium试剂与铜（I）溴在-40℃至-35℃的DMF，得到˚F -benzylcopper试剂。通过反应混合物的19 F NMR光谱分析和化学转化证实了F-苄基镉和-铜试剂的形成。

  DOI：

  10.1016/0022-1139(93)02919-6
• 作为产物：
  描述：

  1,1,2,2-四氟-1,2-二溴乙烷 、 五氟苯酚 生成 1-[溴(二氟)甲基]-2,3,4,5,6-五氟苯
  参考文献：
  名称：

  Copyrolysis of pentafluorophenol with tetrafluoroethylene and bromine

  摘要：

  DOI：

  10.1007/bf00929701

文献信息

• COATED METAL OXIDE NANOPARTICLES AND METHODS FOR PRODUCING SAME
  申请人：Perry Joseph

  公开号：US20100027192A1

  公开（公告）日：2010-02-04

  Disclosed are coated metal oxide nanoparticles comprising a metal oxide nanoparticle having a surface; and ligands attached to the metal oxide nanoparticle surface. Also disclosed are phosphonic acid compounds comprising the structure Gn-R-Xn, wherein G is a terminal group; wherein R is a bridging group; wherein X is a phosphonic acid group; and wherein each n is, independently, 1, 2, or 3. Also disclosed are methods for preparing and using coated metal oxide nanoparticles. Also disclosed are nanocomposite compositions comprising a polymer; and a coated metal oxide nanoparticle dispersed within the polymer. Also disclosed are articles, films, and capacitors comprising a coated metal oxide nanoparticle or a nanocomposite composition. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

  揭示了包含具有表面的金属氧化物纳米颗粒的涂层金属氧化物纳米颗粒；以及附着在金属氧化物纳米颗粒表面的配体。还揭示了包含结构Gn-R-Xn的膦酸化合物，其中G是末端基团；其中R是桥接基团；其中X是膦酸基团；每个n独立地为1、2或3。还揭示了制备和使用涂层金属氧化物纳米颗粒的方法。还揭示了包含聚合物的纳米复合材料组合物；以及分散在聚合物中的涂层金属氧化物纳米颗粒。还揭示了包含涂层金属氧化物纳米颗粒或纳米复合材料组合物的制品、薄膜和电容器。本摘要旨在作为在特定领域进行搜索的扫描工具，并不打算限制本发明。
• A novel double insertion of the difluoromethylene unit from trifluoromethylcopper into the carbon–copper bond of perfluoroaryl- and perfluorovinylcopper reagents: preparation, mechanism and applications of new fluorinated copper reagents
  作者：Zhen-Yu Yang、Donald J. Burton

  DOI：10.1016/s0022-1139(99)00247-x

  日期：2000.3

  (E)-CF3CFCFCF2CF2Cu, which could be trapped with allyl bromide to give (E)-CF3CFCFCF2CF2CH2CHCH2. When CF2CFCu was used as a substrate, (E)-CF3CFCFCF2CF2Cu was observed, but in low yield. A mechanism for this novel double CF2 insertion is proposed to involve a copper difluorocarbenoid complex intermediate, which inserted into the carbon–copper bond of the fluorinated phenyl and vinyl coppers to form fluorinated

  CF 3 Cu与由CuBr和五氟苯基镉C 6 F 5 CdX制备的五氟苯基铜反应，得到双CF 2单元插入产物C 6 F 5 CF 2 CF 2 Cu，产率为70-80％。在室温下，在CuBr存在下，CF 3 MX（M = Cd，Zn; X = Br，CF 3）和C 6 F 5 CdX的插入反应也很好，得到C 6 F 5 CF 2 CF 2 Cu。使用乙烯基铜类似物（Z）-CF 3CFCFCu，双CF 2插入也发生导致的形成（ë）-CF 3 CFCFCF 2 CF 2铜，其可以与烯丙基溴被捕获，得到（É）-CF 3 CFCFCF 2 CF 2 CH 2 CHCH 2。当使用CF 2 ＝ CFCu作为衬底时，观察到（E）-CF 3 CF ＝CFCF 2 CF 2 Cu，但是产率低。这种新型双CF 2的机理有人建议将其插入二氟卡宾铜络合物中间体中，然后将其插入氟化苯基和乙烯基铜的碳-铜键
• Asymmetric α-electrophilic difluoromethylation of β-keto esters by phase transfer catalysis
  作者：Yakun Wang、Shuaifei Wang、Peiyong Qiu、Lizhen Fang、Ke Wang、Yawei Zhang、Conghui Zhang、Ting Zhao

  DOI：10.1039/d1ob00511a

  日期：——

  An efficient and enantioselective α-electrophilic difluoromethylation of β-keto esters has been achieved by phase-transfer catalysis. This procedure is applicable to different kinds of β-keto esters with a series of cinchona-derived C-2′ aryl-substituted phase-transfer catalysts. The reaction gives the corresponding products in good enantioselectivities (up to 83% ee) and yields (up to 92%) with high

  通过相转移催化已经实现了β-酮酯的有效和对映选择性的α-亲电子二氟甲基化。该程序适用于具有一系列金鸡纳衍生的 C-2' 芳基取代的相转移催化剂的不同种类的 β-酮酯。该反应以良好的对映选择性（高达 83% ee）和高 C/O 区域选择性（高达 98 : 2）的产率（高达 92%）得到相应的产物。此外，β-酮酯的C/O选择性可以很容易地逆转和控制。这种不对称二氟甲基化为引入手性C-CF 2 H 基团提供了一种新颖有效的方法。
• Methods and compounds for making coatings, waveguides and other optical devices
  申请人：——

  公开号：US20030162985A1

  公开（公告）日：2003-08-28

  A compound of the general formula R 1 R 2 MR 4 R 5 is disclosed wherein R 1 and R 2 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R 1 and R 2 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, wherein R 4 and R 5 are independently an alkoxy group, OR 3 , or a halogen group, X, except where M is Si, R 4 and R 5 are both ethoxy groups or both chlorine groups, and R 1 and R 2 are perfluorinated groups. This compound formed can be further reacted to attach an additional organic R group, and/or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components. Methods for making compounds of the general formula R 1 MR 4 R 5 R 6 are also disclosed.

  揭示了一种通用公式为R1R2MR4R5的化合物，其中R1和R2分别是芳基、烷基、烯基、环氧基或炔基，其中至少一个R1和R2是全氟化或部分氟化的，其中M选自周期表的14族元素，其中R4和R5分别是烷氧基、OR3或卤素基X，除非M是硅，否则R4和R5都是乙氧基或氯基，而R1和R2是全氟化基团。形成的这种化合物可以进一步反应以连接额外的有机R基团，并/或水解，单独或与一个或多个类似化合物一起，形成分子量为500至10,000的材料，该材料可以沉积在各种基底上作为涂层，或沉积并加工成波导或其他光学器件组件的图案。还揭示了制备通用公式为R1MR4R5R6的化合物的方法。
• Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
  申请人：Rantala T. Juha

  公开号：US20060131753A1

  公开（公告）日：2006-06-22

  An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

  提供了一种集成电路，包括基底和电气绝缘和电气导体材料的离散区域，其中电气绝缘材料是一种混合有机-无机材料，具有1.45克/厘米3或更高的密度和3.0或更低的介电常数。该集成电路可以通过以下方法制造：提供基底；在基底上形成电气绝缘和电气导体材料的离散区域；其中电气绝缘材料在基底上沉积后，在350℃或更低的温度下加热；并且在致密化后，电气绝缘材料具有1.45克/厘米3或更高的密度。还公开了一种制造集成电路的方法，包括使用电气导体材料和介电材料执行双刻蚀法，其中介电材料是直接光图案化的混合有机-无机材料。