Onium salts, photoacid generators for resist compositions, and patterning process
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:EP1077391A1
公开(公告)日:2001-02-21
Onium salts of the formula (1) are novel.
R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q = 5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and "a" is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.
式(1)的铌盐是新颖的。
R1是C1-10烷基或C6-14芳基,R2是H或C1-6烷基,p是1至5的整数,q是0至4的整数,p+q=5,R3是C1-10烷基或C6-14芳基,M是硫或碘原子,"a "等于3或2。由作为光酸发生器的鎓盐组成的化学放大型抗蚀剂组合物适用于微细加工,特别是深紫外光刻,因为它具有许多优点,包括提高了分辨率,即使在长期的 PED 上也能最大限度地减少线宽变化或形状退化,最大限度地减少涂布、显影和剥离后的缺陷,以及改善显影后的图案轮廓。