9,9-bis(3-fluoro-4-hydroxyphenyl)fluorene

• 分子结构分类: 有机化合物 - 苯类化合物 - 芴
• 英文名称: 9,9-bis(3-fluoro-4-hydroxyphenyl)fluorene
• 英文别名: 2-Fluoro-4-[9-(3-fluoro-4-hydroxyphenyl)fluoren-9-yl]phenol
• 化学式: C₂₅H₁₆F₂O₂
• 分子量: 386.398
• InChiKey: KYQXCPBNIIFERU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.2
• 重原子数：
  29
• 可旋转键数：
  2
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.04
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  9,9-bis(3-fluoro-4-hydroxyphenyl)fluorene 、 triphenylsulfonium hydroxycarbonyldifluoromethanesulfonate 在 N,N'-羰基二咪唑 作用下， 以 氯仿 、 乙腈 为溶剂， 反应 12.0h， 生成
  参考文献：
  名称：

  塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

  摘要：

  【问题】提供一种含有盐、酸发生剂和该酸发生剂的光阻组合物，可制造具有良好CD均一性（CDU）的光刻图案。 【解决方案】一种光刻组合物，包括式（I）中表示的盐、酸发生剂和光刻组合物。其中，Q1和Q2分别为F或全氟烷基；R1和R2分别为H、F或全氟烷基；z为0-6的整数；X1为*-CO-O-、*-O-CO-、*-O-CO-O-或*-O-；L1为单键或二价饱和碳氢基；R3、R4、R5和R6为卤素原子、含有卤素原子的烷基，该烷基中的-CH2-可以被-O-或-CO-替换；m3、m5和m6为0-4的整数；m4为0-5的整数；Z+为有机阳离子。【选择图】无。

  公开号：

  JP2020105166A
• 作为产物：
  描述：

  9-芴酮 、 2-氟苯酚 、 3-巯基丙酸 在 sulfated zirconium oxyhydroxide 作用下， 生成 9,9-bis(3-fluoro-4-hydroxyphenyl)fluorene
  参考文献：
  名称：

  Process for the preparation of bishydroxy aromatic compounds

  摘要：

  一种制备双羟基芳香化合物的方法，例如9,9-双(4-羟基苯基)芴，涉及在汞齐酸强度H.sub.0大于约-13.0的固体超强酸催化剂和巯基协同催化剂的存在下，将酮（如芴酮）与苯或取代苯接触。固体超强酸催化剂包括铝、锡和IVA族金属（如锆）的硫酸盐、硫酸化氧化物、硫酸化氧羟化物和硫酸化氧硅酸盐，以及混合金属氧化物，例如钨锆氧化物。对于9,9-双(4-羟基苯基)芴，分离收率很高。

  公开号：

  US05304688A1

文献信息

• MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210286266A1

  公开（公告）日：2021-09-16

  The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10 , and R 1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q 1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X 1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R 2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

  本发明是一种用于形成有机薄膜的材料，包括：由以下通用式（1）所示的化合物；和有机溶剂，在通用式（1）中，X代表具有2至50个碳原子或一个氧原子的价为“n”的有机基团，“n”表示1到10的整数，R1独立地表示以下通用式（2）中的任何一种，其中在通用式（2）中，虚线表示连接点到X，Q1表示含有羰基的一价有机基团，其中至少部分是以下通用式（3）所示的基团，其中在通用式（3）中，虚线表示连接点，X1表示单键或具有1到20个碳原子的二价有机基团，在有机基团具有芳香环时可选地具有取代基，R2表示氢原子、甲基基团、乙基基团或苯基团，**表示连接点。本发明的目的是提供一种用于形成具有干法刻蚀抗性的有机薄膜的材料，同时具有高填充和平整化性能以及对基底的粘附性。
• Optically active compound and photosensitive resin composition
  申请人：——

  公开号：US20030211421A1

  公开（公告）日：2003-11-13

  A photoactive compound is used in combination with a photosensitizer, represented by the following formula (1): A −[( J ) m −( X-Pro )] n (1) wherein A represents a hydrophobic unit comprising at least one kind of hydrophobic groups selected from a hydrocarbon group and a heterocyclic group, J represents a connecting group, X-Pro represents a hydrophilic group protected by a protective group Pro which is removable by light exposure, m represents 0 or 1, and n represents an integer of not less than 1. The protective group Pro may be removable by light exposure in association with the photosensitizer (especially, a photo acid generator), or may be a hydrophobic protective group. The hydrophilic group may be a hydroxyl group or a carboxyl group. The photoactive compound has high sensitivity to a light source of short wavelength beams, for resist application, therefore, the photoactive compound is advantageously used for forming a pattern with high resolution.

  一种光活性化合物与光敏剂结合使用，由以下公式（1）表示： A −[( J ) m −( X-Pro )] n (1) 其中，A代表至少包括一种从烃基和杂环基中选择的疏水基的疏水单元，J代表连接基团，X-Pro代表由光照可去除的保护基团Pro保护的亲水基团，m代表0或1，n代表不少于1的整数。 保护基团Pro可以与光敏剂（特别是光酸发生剂）一起通过光照可去除，也可以是疏水保护基团。亲水基团可以是羟基或羧基。光活性化合物对短波长光源具有很高的敏感性，用于光刻应用，因此，该光活性化合物有利于形成具有高分辨率的图案。
• COMPOUND FOR FORMING ORGANIC FILM, COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184968A1

  公开（公告）日：2017-06-29

  A compound for forming an organic film shown by the formula (1A), R—(—X) m1 (1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and ml represents an integer satisfying 2≦m1≦10, wherein X 2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X 3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R 10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.

  一种用于形成有机薄膜的化合物，其化学式为(1A)，R—(—X)m1(1A)，其中R代表一个单键或具有1至50个碳原子的有机基团；X代表化学式(1B)所示的基团；m1代表满足2≦m1≦10的整数，其中X2代表具有1至10个碳原子的二价有机基团；n1代表0或1；n2代表1或2；X3代表化学式(1C)所示的基团；n5代表0、1或2，其中R10代表氢原子或具有1至10个碳原子的饱和或不饱和碳氢基团，化学式(1C)中苯环的氢原子可能被甲基基团或甲氧基取代。这种用于形成有机薄膜的化合物可以提供具有良好干法刻蚀抗性、耐高温至400°C或更高、高填充和平整化性能的有机薄膜组合物。
• RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20180284615A1

  公开（公告）日：2018-10-04

  Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.

  提供了一种抗碱性过氧化氢水溶液、填孔和平坦化特性以及干法蚀刻特性优异的抗蚀底层膜组合物，该抗蚀底层膜组合物用于多层光刻方法，包括：（A1）聚合物（1A），其包括由以下通式（1）表示的重复单元中的一个或两个或多个；（A2）一种或两种或多种分子量不超过2000且不具有3,4-二羟基苯基的多酚化合物；和（B）有机溶剂。
• RESIST UNDERLAYER FILM COMPOSTION, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170018436A1

  公开（公告）日：2017-01-19

  The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.

  本发明提供了一种用于光刻的抗蚀底层膜组合物，包含具有茚并芴结构的化合物。这种抗蚀底层膜组合物具有优异的填充性能，产生少量气体释放，并具有高耐热性。