Introducing Selenium in Single-Component Molecular Conductors Based on Nickel Bis(dithiolene) Complexes
作者:Hadi Hachem、HengBo Cui、Reizo Kato、Olivier Jeannin、Frédéric Barrière、Marc Fourmigué、Dominique Lorcy
DOI:10.1021/acs.inorgchem.1c00400
日期:2021.6.7
and low conductivity (σRT = 1.7 × 10–5 S cm–1). On the other hand, going from the neutral [Ni(Et-thiazdt)2] dithiolene complex to the corresponding [Ni(Et-thiazds)2] diselenolene complex gives rise to a more conventional layered structure built out of uniform stacks of the diselenolene complexes, different, however, from the all-sulfur analogue [Ni(Et-thiazdt)2]. Band structure calculations show an essentially
已经从它们的前体自由基阴离子制备了全硫单组分分子导体 [Ni(Et-thiazdt) 2 ] (Et-thiazdt = N -ethylthiazoline-2-thione-4,5- dithiolate) 的两种硒化类似物复合体。用硒酮部分替换硫酮得到中性 [Ni(Et-thiaz Se dt) 2 ] 复合物。它采用前所未有的固态组织(用于中性镍配合物),形成完全重叠的二聚体和非常短的分子间 Se…Se 接触(范德华接触距离的 81%)。二聚体之间有限的相互作用导致大的半导体间隙和低电导率(σ RT = 1.7 × 10 –5 S cm –1)。另一方面,从中性 [Ni(Et-thiazdt) 2 ] 二硫烯配合物到相应的 [Ni(Et-thiaz ds ) 2 ]二硒烯配合物产生更传统的层状结构,该结构由均匀堆叠的然而,二硒烯复合物与全硫类似物 [Ni(Et-thiazdt) 2