A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula
where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
提供了一种光刻胶组合物,其中包括具有至少一个
丙烯酸酯或
甲基丙烯酸酯单体的聚合物,其具有以下结构式:其中R1代表氢(H),具有1至20个碳的线性或支链烷基基团,或具有1至20个碳的半
氟化或
全氟化线性或支链烷基基团;R2代表未取代的脂肪族基团或取代的脂肪族基团,每个取代的脂肪族基团上附着零个或一个三
氟甲基(
CF3)基团,或取代或未取代的芳香基团;R3代表氢(H),甲基(
CH3),三
氟甲基( ),二
氟甲基(
CHF2),
氟甲基(
CH2F),或半
氟化或
全氟化脂肪族链;R4代表三
氟甲基( ),二
氟甲基( ),
氟甲基( ),或半
氟化或
全氟化的取代或未取代的脂肪族基团。本文还提供了一种使用该光刻胶组合物进行衬底图案化的方法。