Resistance Controllability in Alkynylgold(III) Complex-Based Resistive Memory for Flash-Type Storage Applications
作者:Peng Wang、Yu Fang、Jun Jiang、Yujin Ji、Youyong Li、Junwei Zheng、Qingfeng Xu、Jianmei Lu
DOI:10.1002/asia.201700369
日期:2017.7.18
of transition‐metal complex systems containing nitrogen‐donor ligands. Herein, attempts are made to introduce novel alkynylgold(III) materials into memory devices with superior performance. In this respect, an alkynyl‐containing coumarin gold(III) complex, [(C19N5H11)Au−C≡C−C9H5O], has been synthesized and integrated into a sandwiched Al/[(C19N5H11)Au−C≡C−C9H5O]/indium tin oxide device. By precisely
由于适用于海量数据存储的最新信息技术的要求,强调了有机存储设备(OMD)材料的必要性。但是,基于金属配合物的OMD仅限于几种类型的含氮供体配体的过渡金属配合物系统。本文中,试图将新型炔基金(III)材料引入具有优异性能的存储器件中。在这方面,含炔基-香豆素金(III)络合物,[(C 19 Ñ 5 ħ 11)的Au-C≡C-C 9 H ^ 5 O],已经合成并集成到一个夹在铝/ [(C 19 ñ 5 ħ 11)的Au-C≡C-C 9 ħ5 O] /铟锡氧化物器件。通过精确地控制遵守电流(我CC),该装置示出了从快闪型二进制电阻切换(不同的切换特性我立方厘米≤10 -3 A)到WORM型(WORM =一次写入多次读出)三元电阻开关(I cc = 10 -2 A)。这项工作探索了基于电金(III)配合物的存储器,可用于有机电子领域。