Low dielectric constant organic dielectrics based on cage-like structures
申请人:——
公开号:US20030187139A1
公开(公告)日:2003-10-02
A low dielectric constant material has a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbones are crosslinked via the first and second reactive groups in a crosslinking reaction without an additional crosslinker, and wherein a cage structure having at least 10 atoms is covalently bound to at least one of the first and second backbone.
The present composition provides a composition comprising: (a) thermosetting component wherein the thermosetting component comprises monomer having the structure dimer having the structure or a mixture of the monomer and the dimer wherein Y is selected from cage compound and silicon atom; R
1
, R
2
, R
3
, R
4
, R
5
, and R
6
are independently selected from aryl, branched aryl, and arylene ether; at least one of the aryl, the branched aryl, and the arylene ether has an ethynyl group; R
7
is aryl or substituted aryl; and at least one of the R
1
, R
2
, R
3
, R
4
, R
5
, and R
6
comprises at least two isomers; and (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate when the composition is applied to a substrate. The present composition is particularly useful as a dielectric material in microelectronic
1
Low dielectric constant materials and methods of preparation thereof
申请人:——
公开号:US20040158024A1
公开(公告)日:2004-08-12
The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.
RESIN COMPOSITION, VARNISH, RESIN FILM AND SEMICONDUCTOR DEVICE USING THE SAME
申请人:Fujita Kazuyoshi
公开号:US20090118431A1
公开(公告)日:2009-05-07
A main object of the present invention is to provide a resin composition having high heat resistance and a low dielectric constant, a varnish thereof, a resin film thereof and a semiconductor device using the same.
In the present invention, the object is achieved by a resin composition comprising a compound having a structure represented by formula (1) and a crosslinking agent:
wherein in formula (1), R
0
is a single bond or has a structure represented by formula (2); R
1
to R
8
are respectively any of hydrogen, a group having an alicyclic structure, an organic group having 1 to 10 carbon atoms other than the group having an alicyclic structure, a hydroxyl group and a carboxyl group; and “X” is any of —O—, —NHCO—, —CONH—, —COO— and —OCO—; further, wherein in formula (2), “Ar” is an aromatic group; “Y” is any of a single bond —O—, —S—, —OCO— and —COO—; “q” is an integer of 1 or more; R
9
is hydrogen or an organic group having 1 or more carbon atoms and may be identical with or different from each other when “q” is an integer of 2 or more; at least one of R
1
to R
8
is the group having an alicyclic structure when R
0
is a single bond; at least one of R
1
to R
9
is the group having an alicyclic structure when R
0
has the structure represented by formula (2); and “*” and “**” represent a position to be bonded to a different chemical structure.
Resin Composition, Polyimide Resin Composition, Polybenzoxazole Resin Composition, Varnish, Resin Film and Semiconductor Device Using the Same
申请人:Enoki Takashi
公开号:US20080255335A1
公开(公告)日:2008-10-16
A resin composition having high heat resistance and low dielectric constant after heat treatment, a varnish thereof and a semiconductor device using the same are provided by a resin composition including a compound having a structure represented by the general formula (1):
wherein, “Ar” is an aromatic group; “a” is 0 or 1; R
11
is an organic group having one or more carbon atoms and at least one is a group having an alicyclic structure; when “q” is an integer of 2 or more, R
11
s may be the same or different from each other; at least one of R
1
to R
5
and at least one of R
6
to R
10
on respective benzene rings are Ar-binding sites or R
11
-binding sites and the others of R
1
to R
5
and R
6
to R
10
are each hydrogen, a group having an alicyclic structure, an organic group having 1 to 10 carbon atoms, a hydroxyl group or a carboxyl group; when “a” is 0, at least one of R
1
to R
5
and R
6
to R
10
is a group having an alicyclic structure; “q” is an integer of 1 or more; and “X” is any of —O—, —NHCO—, —COHN—, —COO— and —OCO—.