Characterization of the Non-uniform Reaction in Chemically Amplified Calix[4]resorcinarene Molecular Resist Thin Films
摘要:
ccc立体异构体纯化的叔丁氧羰酰氧基保护的钙[4]间苯二酚分子抗蚀剂与光酸发生器混合后,在薄膜中表现出不均匀的光酸催化反应。与主体相比,表面的反应程度有所降低,通过氘标记叔丁氧羰基的中子反射率测定,平均表面层厚度为 7.0 ± 1.8 nm。众所周知,环境中的杂质(胺和有机碱)会淬灭表面反应并产生影响,但掠入射 X 射线衍射还显示出另一种影响,即受保护的分子抗蚀剂优先取向于表面,而薄膜的主体则显示出代表无定形堆积的漫散射。通过近边 X 射线吸收精细结构测量,对表面脱保护反应和光酸的存在进行了量化。
In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I):
Photoresists that comprises such polymers also are provided.
在一个首选实施例中,提供了包含以下化学式(I)结构的聚合物:
还提供了包含这种聚合物的光刻胶。
Salt suitable for an acid generator and a chemically amplified resist composition containing the same
申请人:Harada Yukako
公开号:US20070078269A1
公开(公告)日:2007-04-05
The present invention provides a salt of the formula (I):
wherein ring Y represents monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms, in which one —CH
2
— group is substituted with —COO— group, and at least one hydrogen atom in the monocyclic or polycyclic hydrocarbon group may optionally be substituted with alkyl group having 1 to 6 carbon atom, alkoxy group having 1 to 6 carbon atom, perfluoroalkyl group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, hydroxyl group or cyano group; Q
1
and Q
2
each independently represent fluorine atom or perfluoroalkyl group having 1 to 6 carbon atoms; A
+
represents organic counter ion; and n shows an integer of 0 to 12.
The present invention also provides a chemically amplified resist composition comprising the salt of the formula (I).
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
申请人:Mitsubishi Gas Chemical Company, Inc.
公开号:US20160145231A1
公开(公告)日:2016-05-26
A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
申请人:——
公开号:US20040167322A1
公开(公告)日:2004-08-26
A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
A pretreatment composition of: (a) at least one compound having structure VI
V
1
—Y—V
2
VI
wherein Y is selected from the group consisting of S, O, NR
2
, (HOCH)
p
, and
each R
1
is independently selected from H, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group or a halogen, each R
2
is independently H, SH, CH
3
, C
2
H
5
, and a linear or branched C
1
-C
4
alkyl group containing a thiol group; and wherein V
1
and V
2
are independently selected from
wherein, m is independently an integer from 0 to 4 with the proviso that m can =0 only when Y═
n is an integer from 1 to 5; p is an integer of from 1 to 4, and each R
1
is defined as above;
(b) at least one organic solvent, and optionally, (c) at least one adhesion promoter; wherein the amount of the compound of Structure VI present in the composition is effective to inhibit residue from forming when the photosensitive composition is coated on a substrate and the coated substrate is processed to form an image thereon.