A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.
一种用于去除聚合物材料和蚀刻残留物的残留物去除剂包括 2-(2-
氨基乙基
氨基)-
乙醇和可选的另一种双碳原子连接的烷醇胺化合物、
没食子酸或
儿茶酚、
水、极性有机溶剂和
羟胺。从基底(如包括
钛冶
金的集成电路半导体晶片)上去除光阻或其他残留物的工艺包括以下步骤:在足以从基底上去除光阻或其他残留物的时间和温度下,将基底与上述组合物接触。在组合物和工艺中使用 2-(2-
氨基乙基
氨基)-
乙醇,可以在不破坏基底上的
钛或其他
金属的情况下,出色地去除残留物。组合物的闪点最好高于约 130 摄氏度。