This invention relates to processes for the production of organometallic compounds represented by the formula H
3
Al:L
n
wherein L is one or more Lewis bases capable of providing an unshared electron pair to the aluminum and n is 1 or 2, which comprise (a) forming a first solution of an alkali metal aluminum hydride and a Lewis base in an ethereal solvent, (b) adding to said first solution an aluminum halide in an ethereal solvent under reaction conditions sufficient to produce a second solution comprising said organometallic compound, and (c) separating said organometallic compound from said second solution. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
本发明涉及生产有机
金属化合物的过程,其表示为公式H3Al:Ln,其中L是能够提供未共享电子对给铝的一个或多个路易斯碱,n为1或2,包括以下步骤:(a)在醚溶剂中形成一种碱
金属铝
氢化物和路易斯碱的第一溶液,(b)在反应条件下向该第一溶液中加入一种醚溶剂中的铝卤化物,以产生包含所述有机
金属化合物的第二溶液,(c)从所述第二溶液中分离出所述有机
金属化合物。这些有机
金属化合物在半导体应用中作为
化学气相或原子层沉积前体用于薄膜沉积。