Solution-processed organic micro crystal transistor based on tetraceno[2,3-b]thiophene from a monoketone precursor
作者:Motonori Watanabe、Ting-Han Chao、Shun-Wei Liu、Ching-Ting Chien、Yuan Jay Chang、Chih-Hsien Yuan、Kuan-Chun Huang、Shu-Hua Chien、Teruo Shinmyozu、Tahsin J. Chow
DOI:10.1039/c1jm11834j
日期:——
The synthesis, thermal and photophysical properties, and solution-processed organic field effect transistors fabricated from a soluble tetraceno[2,3-b]thiophene precursor 1. Compound 1 was synthesised in 9.8% through 6 steps. The TGA profiles showed that a 9.1% weight loss occurred at ca. 130 °C, corresponding to an expulsion of a carbonyl group. The photogeneration of tetraceno[2,3-b]thiophene from 1 in the solution state could be fitted into a first-order rate law with a rate constant (k) of 2.05 × 10−2s−1 in a yield of 55.6% (±0.9%) under a 1.25 mW cm−2 UV lamp. The platelet micro crystals of 1, formed either by heat or by light, were confirmed by XRD to be identical to a simulated one from reported X-ray crystallographic data. The field effect mobility across a single crystal was measured to be 4.75 × 10−1 cm2 V−1s−1 with on/off ratio 105. The high purity of single crystals formed both by heat and by light are supported by an EPR analysis. This is the first report of a solution-processed single-crystal OFET of linear acenes without bulky substituent groups. In another experiment, the devices made directly from an amorphous thin film of 1, prepared by spin-coating, exhibited a charge mobility 3.0 × 10−4 cm2 V−1s−1 with on/off ratio 103.
合成、热和光物理性质,以及由可溶性四萘[2,3-b]噻吩前体1制成的溶液加工有机场效应晶体管的研究。化合物1通过6个步骤合成,得率为9.8%。热重分析(TGA)表明,在约130°C时发生了9.1%的重量损失,这与羰基的排出相对应。从1中在溶液状态下光生成四萘[2,3-b]噻吩的过程符合一阶速率定律,速率常数(k)为2.05 × 10−2 s−1,产率为55.6%(±0.9%),在1.25 mW cm−2的紫外灯照射下实现。通过X射线衍射(XRD)确认,由热或光形成的1的板状微晶与报告的X射线晶体学数据模拟结果相同。单晶的场效应迁移率测量为4.75 × 10−1 cm2 V−1s−1,开关比为105。通过电子顺磁共振(EPR)分析支持了热和光形成的单晶高纯度。这是首次报告的无大取代基的线性烯烃溶液处理单晶场效应晶体管。在另一项实验中,直接从通过旋涂法制备的无定型薄膜1制成的器件,表现出3.0 × 10−4 cm2 V−1s−1的载流子迁移率,开关比为103。