3-(Ethenoxymethyl)-3a,10b-dihydropyrene

• 分子结构分类: 有机化合物 - 苯类化合物 - 菲及其衍生物
• 英文名称: 3-(Ethenoxymethyl)-3a,10b-dihydropyrene
• 英文别名: 3-(ethenoxymethyl)-3a,10b-dihydropyrene
• 化学式: C₁₉H₁₆O
• 分子量: 260.3
• InChiKey: ONIHVBNSZDTXES-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  20
• 可旋转键数：
  3
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.16
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

文献信息

• RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20140178820A1

  公开（公告）日：2014-06-26

  An additive polymer comprising recurring styrene units having an ester group bonded to a CF 3 —C(OR 2 )—R 3 group (wherein R 2 is H, acyl or acid labile group, R 3 is H, CH 3 or CF 3 ) such as 1,1,1,3,3,3-hexafluoro-2-propanol is added to a polymer capable of increasing alkali solubility under the action of acid to formulate a resist composition. The resist composition can minimize outgassing from a resist film during the EUV lithography and form a resist film having a hydrophilic surface sufficient to prevent formation of blob defects on the film after development.