N-[(9-Ethylcarbazol-3-yl)methylene]-2-methyl-1-indolinylamine

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吲哚及其衍生物
• 英文名称: N-[(9-Ethylcarbazol-3-yl)methylene]-2-methyl-1-indolinylamine
• 英文别名: (E)-1-(9-ethylcarbazol-3-yl)-N-(2-methyl-2,3-dihydroindol-1-yl)methanimine
• 化学式: C₂₄H₂₃N₃
• 分子量: 353.5
• InChiKey: TWPXERWDHZWUPC-PCLIKHOPSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.9
• 重原子数：
  27
• 可旋转键数：
  3
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.21
• 拓扑面积：
  20.5
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• LAMINATED BODY INCLUDING NOVOLAC RESIN AS PEELING LAYER
  申请人：Nissan Chemical Corporation

  公开号：EP3706156A1

  公开（公告）日：2020-09-09

  There is provided a laminated body for separating an object to be processed by cutting or the like, or for processing, for example, polishing a back surface of a water, the laminated body comprising an intermediate layer that is disposed between a support and the object to be processed and peelably adheres to the support and the object to be processed, wherein the intermediate layer includes at least a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification, and a material and a method for separation without mechanical load. A laminated body for polishing a back surface of a wafer, the laminated body comprising an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.

  提供了一种层压体，用于通过切割等方式分离待加工物体，或用于加工，例如，抛光水的背面，层压体包括中间层，该中间层设置在支撑物和待加工物体之间，并可剥离地粘附在支撑物和待加工物体上、其中，中间层至少包括一个与支撑物接触的剥离层，剥离层含有一种酚醛树脂，可吸收通过支撑物入射的波长为 190 纳米至 600 纳米的光，从而产生改性效果，以及一种无需机械负荷即可分离的材料和方法。 一种用于抛光晶片背面的层压体，该层压体包括中间层，该中间层设置在晶片的支撑件和电路表面之间，并可剥离地粘附在支撑件和电路表面上，其中，中间层包括与晶片接触的粘附层和与支撑件接触的剥离层，剥离层包含一种酚醛树脂，该酚醛树脂可吸收通过支撑件入射的波长为 190 纳米至 600 纳米的光，从而产生改性效果。剥离层在 190 纳米至 600 纳米波长范围内的透光率可达 1%至 90%。光吸收引起的改性可能是酚醛树脂的光分解。
• Method for manufacturing semiconductor substrate having group-III nitride compound layer
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US11339242B2

  公开（公告）日：2022-05-24

  A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): a polymer containing a unit structure of the following Formula (2): O—Ar1  Formula (2) a polymer containing a structural unit of the following Formula (3): O—Ar2—O—Ar3-T-Ar4  Formula (3) a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

  一种制造具有图案化 III 族氮化物化合物层的半导体衬底的方法，即使在 300° C.-700° C 的高温下使用蚀刻方法，也不会因回流或分解而使形成的掩膜图案塌陷。包括以下步骤：在衬底的 III 族氮化物化合物层上形成图案化掩膜层，以及使用掩膜图案在 300℃或更高温度和 700℃或更低温度下通过干法蚀刻 III 族氮化物化合物层，以形成图案化 III 族氮化物化合物层，其中图案化掩膜层包含含有下式 (1) 单元结构的聚合物： 含有下式（2）单元结构的聚合物： O-Ar1 式（2） 含有下式（3）结构单元的聚合物： O-Ar2-O-Ar3-T-Ar4 式（3） 含有式（2）单元结构和式（3）单元结构组合的聚合物，或上述聚合物的交联结构。
• Phthalocyanine Composition and Photoconductive Material, Electrophotographic Photoreceptor Cartridge, and Image-Forming Apparatus Each Employing the Composition
  申请人：Wada Mitsuo

  公开号：US20080268357A1

  公开（公告）日：2008-10-30

  A phthalocyanine composite with high sensitivity and low environmental dependence is provided. It comprises both a at least one phthalocyanine compound expressed by general formula (1) and a at least one phthalocyanine compound expressed by general formula (2): where, in the general formulae (1) and (2), M 1 represents at least one arbitrary atom or atomic group that is capable of binding to a phthalocyanine, M 2 represents an atom, or an atomic group containing an atom, selected from the second and subsequent periods of the periodic table and capable of binding to a phthalocyanine, M 1 and M 2 being different in kind from each other, X 1 -X 4 represent, independently of each other, a halogen atom, and a, b, c, and d represent, independently of each other, an integer between 0 and 4 and satisfy a+b+c+d >1.
• DIARYLAMINE NOVOLAC RESIN
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20140235059A1

  公开（公告）日：2014-08-21

  A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): (in Formula (1), each of Ar 1 and Ar 2 is a benzene ring or a naphthalene ring). A method for manufacturing a semiconductor device, including: forming an underlayer film on a semiconductor substrate with the resist underlayer film-forming composition; forming a hardmask on the underlayer film; forming a resist film on the hardmask; forming a resist pattern by irradiation with light or an electron beam followed by development; etching the hardmask with the resist pattern; etching the underlayer film with the hardmask thus patterned; and processing the semiconductor substrate with the underlayer film thus patterned.
• METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE HAVING GROUP-III NITRIDE COMPOUND LAYER
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20190225731A1

  公开（公告）日：2019-07-25

  A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): a polymer containing a unit structure of the following Formula (2): O—Ar 1   Formula (2) a polymer containing a structural unit of the following Formula (3): O—Ar 2 —O—Ar 3 -T-Ar 4   Formula (3) a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.