Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
申请人:Entegris, Inc.
公开号:US10138117B2
公开(公告)日:2018-11-27
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
用于从微电子设备上选择性去除氮化钛和/或光刻胶蚀刻残留材料(相对于金属导电材料(如钨)和绝缘材料)的组合物。移除组合物的 pH 值较低,含有至少一种氧化剂和至少一种蚀刻剂,以及可将金属侵蚀降至最低的腐蚀抑制剂和可保护介电材料的钝化剂。