二(4-苄基氧基苯基)砜 | 71338-01-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 二(4-苄基氧基苯基)砜
• 中文别名: 苯酰胺,N-(2-异氰基乙基)-
• 英文名称: 4,4'-sulfonylbis((benzyloxy)benzene)
• 英文别名: Bis-4-benzyloxyphenylsulfon；Bis(4-benzyloxyphenyl) sulphone；1-phenylmethoxy-4-(4-phenylmethoxyphenyl)sulfonylbenzene
• CAS: 71338-01-7
• 化学式: C₂₆H₂₂O₄S
• 分子量: 430.524
• InChiKey: LLHLLWGYOABZJN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.6
• 重原子数：
  31
• 可旋转键数：
  8
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.08
• 拓扑面积：
  61
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  4-苄氧基溴苯 在 potassium pyrosulfite 、 palladium diacetate 、 N,N-二异丙基乙胺 、 tri tert-butylphosphoniumtetrafluoroborate 作用下， 以 N,N-二甲基甲酰胺 为溶剂， 反应 20.0h， 以69%的产率得到二(4-苄基氧基苯基)砜
  参考文献：
  名称：

  从芳基卤化物和二氧化硫替代物钯催化一步合成对称二芳基砜

  摘要：

  已经开发了一种从芳基卤化物一步合成对称二芳基砜的简便方法。该方法的一个关键是使用 K2S2O5，它可以轻松安全地处理...

  DOI：

  10.1246/cl.190300

文献信息

• [EN] PROCESS FOR THE PRODUCTION OF DIPHENYL SULFONE COMPOUNDS<br/>[FR] PROCESSUS DE FABRICATION DE COMPOSÉS À BASE DE DIPHÉNYLSULFONE
  申请人：BANDODKAR HEMANT RATANAKAR

  公开号：WO2014170709A1

  公开（公告）日：2014-10-23

  A method for controlled production of mono and diether derivatives of 4,4'-dihydroxydiphenyl sulfone (SDP) namely 4-substituted-4'-hydroxydiphenyl sulfones and 4,4'-disubstituted diphenyl sulfones in high yields by reacting alkyl halide and the like, with 4,4'- dihydroxydiphenyl sulfone. 4-substituted-4'-hydroxydiphenyl sulfone is prepared by reacting equimolar ratio of 4,4'-dihydroxydiphenyl sulfone, alkyl halide and aqueous alkali solution with >80% yield. 4,4'-disubstituted diphenyl sulfone is prepared by reacting one mole of 4,4'- dihydroxydiphenyl sulfone, two moles of alkyl halide and like and two moles of aqueous alkali solution with >80% yield. The method of invention is useful in production of diphenyl sulfone compounds such as 4-allyloxy-4'-hydroxydiphenyl sulfone, 4,4'-diallyloxydiphenyl sulfone, 4-isopropxy-4'-hydroxydiphenyl sulfone, 4,4'-diisopropoxydiphenyl sulfone, 4- benzyloxy-4'-hydroxydiphenyl sulfone, 4,4'-dibenzyloxydiphenyl sulfone etc. This is a commercially feasible green manufacturing process.

  一种控制生产4,4'-二羟基二苯砜（SDP）的单醚和双醚衍生物的方法，即通过将烷基卤化物等与4,4'-二羟基二苯砜反应，高产率地制备4-取代-4'-羟基二苯砜和4,4'-二取代二苯砜。通过将4,4'-二羟基二苯砜、烷基卤化物和水溶性碱性溶液的等摩尔比反应，可以制备出产率>80%的4-取代-4'-羟基二苯砜。通过将1摩尔的4,4'-二羟基二苯砜、2摩尔的烷基卤化物和类似物以及2摩尔的水溶性碱性溶液反应，可以制备出产率>80%的4,4'-二取代二苯砜。该发明的方法可用于生产二苯砜化合物，例如4-丙烯氧基-4'-羟基二苯砜、4,4'-二丙烯氧基二苯砜、4-异丙氧基-4'-羟基二苯砜、4,4'-二异丙氧基二苯砜、4-苄氧基-4'-羟基二苯砜、4,4'-二苄氧基二苯砜等。这是一种商业可行的绿色制造过程。
• AB-type monomers for the preparation of perfluorocycloalkene (PFCA) aryl ether polymers
  作者：Raymond Campos、Aleksander A. Mansur、Chloe H. Cook、Benjamin Batchelor、Scott T. Iacono、Dennis W. Smith

  DOI：10.1016/j.jfluchem.2014.07.013

  日期：2014.10

  polymerizations. The formation of vinyl and allyl substituted products were quantified and shown to be dependent on PFCA ring size and reaction medium. Nearly equal amounts of vinyl- and allyl-substituted products were observed with perfluorocyclohexene (PFCH) while 2–11% allyl-substitution was observed with perfluorocyclopentene (PFCP), depending on reaction medium polarity. Previous PFCA research and characterization

  描述了一种制备具有互补氟代烯烃和苯酚官能团的AB型单体的方法。该三步法适合于工业规模放大，并使用了广泛使用的商业试剂，包括双酚和全氟环烯烃（PFCA）化合物。标题化合物和中间体通过多核NMR和FT-IR光谱进行了表征，提供了PFCA逐步增长聚合反应的结构和机理解释。乙烯基和烯丙基取代的产物的形成进行定量，并显示出依赖于PFCA环的大小和反应介质中。几乎与perfluorocyclohexene（PFCH），而用全氟环戊烯（PFCP）中观察到2-11％的烯丙基取代观察的乙烯基和烯丙基取代的产品相同的量，这取决于反应介质的极性。标题化合物的先前的研究PFCA和表征表明氟化物催化重排是两个取代产物主要负责的形成。衍生自双酚A的AB型单体的聚合证明，并且显示出可再现地产生更高的分子量大于先前描述的方法的成膜聚合物。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。
• SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL
  申请人：Takeda Satoshi

  公开号：US20130183830A1

  公开（公告）日：2013-07-18

  Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

  本文描述了用于形成溶剂可开发光刻胶底层膜的组合物。这些组合物可以包括一个水解性有机硅烷，其硅原子与含有受保护脂肪醇基团的有机基团结合，水解的水解性有机硅烷的水解缩合产物，或两者的组合物和溶剂。该组合物可以形成一个光刻胶底层膜，其中包括水解性有机硅烷，水解的水解性有机硅烷的水解缩合产物，或两者的组合物，硅烷化合物中的硅原子与含有受保护脂肪醇基团的有机基团的比例为总硅原子量的0.1至40%摩尔。还描述了一种将该组合物应用于半导体衬底并烘烤该组合物以形成光刻胶底层膜的方法。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150322212A1

  公开（公告）日：2015-11-12

  A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes; Formula (1): R 1 a R 2 b Si(R 3 ) 4-(a+b) wherein R 1 is an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3; Formula (2): R 4 a R 5 b Si(R 6 ) 4-(a+b) wherein, R 4 is an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

  一种可用作硬掩膜的抗蚀底层膜。一种用于光刻的抗蚀底层膜形成组合物，包括：作为硅烷的，一种可水解的硅烷，其水解产物或其水解-缩合产物，其中可水解的硅烷包括公式（1）的可水解硅烷或含有公式（1）的可水解硅烷与公式（2）的可水解硅烷的组合物，其在所有硅烷中的摩尔分数小于50％；公式（1）：R1aR2bSi（R3）4-（a+b），其中R1是含有公式（1-1），公式（1-2）或公式（1-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数；公式（2）：R4aR5bSi（R6）4-（a+b），其中R4是含有公式（2-1），公式（2-2）或公式（2-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数。