2-(4-methoxybutyl)-2-adamantyl acrylate

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2-(4-methoxybutyl)-2-adamantyl acrylate
• 英文别名: [2-(4-Methoxybutyl)-2-adamantyl] prop-2-enoate
• 化学式: C₁₈H₂₈O₃
• 分子量: 292.419
• InChiKey: PCPVRAXPPQOZFH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  21
• 可旋转键数：
  8
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.83
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  2-(4-methoxybutyl)-2-adamantanol 、 丙烯酰氯 在 三乙胺 、 硫酸 作用下， 以 四氢呋喃 、 水 为溶剂， 反应 12.0h， 以80%的产率得到2-(4-methoxybutyl)-2-adamantyl acrylate
  参考文献：
  名称：

  [EN] 2-ALKOXYALKYL-2-ADAMANTYL (METH)ACRYLATE AND METHOD FOR PREPARING SAME
  [FR] (METH)ACRYLATE DE 2-ALCOXYALKYL-2-ADAMANTYLE ET SON PROCEDE DE PREPARATION

  摘要：

  提供了2-烷氧基烷基-2-金刚烷基（甲基）丙烯酸酯及其制备方法。

  公开号：

  WO2003104182A1

文献信息

• Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group
  申请人：Takei Satoshi

  公开号：US20080102649A1

  公开（公告）日：2008-05-01

  There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

  提供了一种用于半导体器件制造的光刻下层涂层形成组合物，该组合物在与光刻胶相比具有较高的干法蚀刻速率，不与光刻胶混合，并能够使具有高纵横比孔的半导体衬底表面变平。该光刻下层涂层形成组合物包括：具有两个或更多保护羧基的化合物、具有两个或更多环氧基的化合物和溶剂。
• Positive resist composition
  申请人：FUJI PHOTO FILM CO., LTD.

  公开号：EP1338922A2

  公开（公告）日：2003-08-27

  A positive resist composition comprising: (A) a resin which comprises a repeating unit represented by the following formula (I): wherein R1 represents a hydrogen atom or an alkyl group, A1 represents a single bond or a linking group, R2 represents an alkylene group, and X represents an alkoxy group or a hydroxyl group, and exhibits an increased rate of dissolution in an alkali developing solution by an action of an acid; and (B) a compound capable of generating an acid on exposure to active light rays or a radiation.

  一种阳离子抗蚀剂组合物，包括： (A) 一种树脂，它由下式(I)代表的重复单元组成： 其中 R1 代表氢原子或烷基，A1 代表单键或连接基团，R2 代表亚烷基，X 代表烷氧基或羟基，在酸的作用下，在碱显影溶液中的溶解速率增加；以及 (B) 在暴露于活性光射线或辐射时能产生酸的化合物。
• COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1617289A1

  公开（公告）日：2006-01-18

  There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).

  本发明提供了一种用于半导体设备制造的光刻工艺中的光刻用底层涂层形成组合物，以及一种与光刻胶相比干蚀刻率高的底层涂层。具体地说，它是一种无需使用强酸催化剂进行交联反应即可形成底层涂层的组合物，以及一种底层涂层形成组合物，该组合物包含具有环氧基的成分（聚合物、化合物）和具有酚羟基、羧基、保护羧基或酸酐结构的成分（聚合物、化合物）。
• LOWER LAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY INCLUDING NAPHTHALENE RING HAVING HALOGEN ATOM
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1780600A1

  公开（公告）日：2007-05-02

  There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.

  本发明提供了一种用于光刻的底层涂层形成组合物，以及一种与光刻胶相比干蚀刻率高且不会与光刻胶混合的底层涂层，用于半导体设备制造的光刻工艺。具体地说，它是一种底层涂层形成组合物，包括一种聚合物（其结构单元含有萘环，在构成该聚合物的结构单元中被卤原子取代的摩尔比为 0.3 或以上）、一种溶剂。
• COMPOSITION FOR FORMING OF UNDERLAYER FILM FOR LITHOGRAPHY THAT CONTAINS COMPOUND HAVING PROTECTED CARBOXYL
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1850180A1

  公开（公告）日：2007-10-31

  There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

  本发明提供了一种用于光刻的底层涂层形成组合物，该组合物可用于半导体器件制造的光刻工艺中，与光刻胶相比，该组合物具有较高的干蚀刻率，不会与光刻胶混合，并且能够使具有高纵横比孔的半导体基板表面平整。 用于光刻的底层涂层形成组合物包括：具有两个或两个以上受保护羧基的化合物、具有两个或两个以上环氧基的化合物和溶剂。