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diglycidyl 1,3-adamantanedicarboxylate

中文名称
——
中文别名
——
英文名称
diglycidyl 1,3-adamantanedicarboxylate
英文别名
Bis(oxiran-2-ylmethyl) adamantane-1,3-dicarboxylate
diglycidyl 1,3-adamantanedicarboxylate化学式
CAS
——
化学式
C18H24O6
mdl
——
分子量
336.385
InChiKey
WABAGKLGXYZOEX-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.1
  • 重原子数:
    24
  • 可旋转键数:
    8
  • 环数:
    6.0
  • sp3杂化的碳原子比例:
    0.89
  • 拓扑面积:
    77.7
  • 氢给体数:
    0
  • 氢受体数:
    6

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • JP2015/17076
    申请人:——
    公开号:——
    公开(公告)日:——
  • SHIRYAEV A. K., MATER. 9 KONF. MOL. UCHENYX YH-TA DRUZHBY NARODOV, MOSKVA, 15-19 APR., 19+
    作者:SHIRYAEV A. K.
    DOI:——
    日期:——
  • RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD OF FORMING RESIST PATTERN USING THE SAME
    申请人:Sakamoto Rikimaru
    公开号:US20100221657A1
    公开(公告)日:2010-09-02
    There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.
  • RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
    申请人:Hiroi Yoshiomi
    公开号:US20100266951A1
    公开(公告)日:2010-10-21
    There is provided a composition for forming a resist underlayer film having a large selection ratio of dry etching rate, exhibiting desired values of the k value and the refractive index n at a short wavelength, for example, in an ArF excimer laser, and further, exhibiting solvent resistance. A resist underlayer film forming composition for lithography comprises a linear polymer having, in a main chain thereof, at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure; and a solvent, wherein to the aromatic ring or the nitrogen atom, at least one alkoxyalkyl group or hydroxyalkyl group is directly bonded.
  • COMPOUND, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    申请人:SUMITOMO CHEMICAL COMPANY, LIMITED
    公开号:US20190250508A1
    公开(公告)日:2019-08-15
    The present invention can provide a salt capable of producing a resist pattern with satisfactory CD uniformity (CDU), and a resist composition. A resist composition comprising a resin including a structural unit having an acid-labile group, an acid generator and a compound represented by formula (I): wherein, in formula (I), R 1 represents a hydrocarbon group having 1 to 36 carbon atoms which may have a substituent, X 1 represents *—CO—O—, *—O—CO—, *—O—CO—O— or *—O—, and * represents a bonding site to R 1 , L 1 represents a single bond or a hydrocarbon group having 1 to 36 carbon atoms which may have a substituent, and —CH 2 — included in the hydrocarbon group may be replaced by —O—, —S—, —CO— or —SO 2 —, R 2 represents a saturated hydrocarbon group having 1 to 12 carbon atoms, u1 represents an integer of 0 to 2, s1 represents 1 or 2, t1 represents 0 or 1, in which s1+t1 is 1 or 2, n represents an integer of 2 or more, and a plurality of X 1 , L 1 , s1, t1, R 2 and u1 each may be the same or different from each other.
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