申请人:President and Fellows of Harvard College
公开号:US20180273550A1
公开(公告)日:2018-09-27
Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO
2
films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.
化合物是由连接到一个或多个金属原子的双环胺基酸配体合成的。这些化合物对于合成含有金属的材料非常有用。例如,纯金属、金属合金、金属氧化物、金属氮化物、金属磷化物、金属硫化物、金属硒化物、金属碲化物、金属硼化物、金属碳化物、金属硅化物和金属锗化物。材料合成的技术包括气相沉积(化学气相沉积和原子层沉积)、液相溶液方法(溶胶-凝胶和沉淀)和固相热解。在加热基底上,通过铜(I)双环胺基酸蒸汽和氢气的反应形成铜金属薄膜,而与水蒸气的反应则产生氧化铜。通过它们的双环胺基酸蒸汽与氢气反应,在表面上沉积了银和金薄膜。在加热基底上,通过钴(II)双(双环胺基酸)蒸汽、氨气和氢气的反应,在表面上沉积了钴金属薄膜,而与氨气反应产生钴氮化物,与水蒸气反应产生氧化钴。通过在加热表面上使用钌(II)双(双环胺基酸)或钌(III)三(双环胺基酸)与氢气或氨气或氧等共反应剂的反应来沉积钌金属薄膜。适用的应用包括微电子中的电连接和磁信息存储设备中的磁电阻层。通过铪(IV)四(双环胺基酸)与水、双氧水或臭氧等氧源的反应来沉积铪氧化物薄膜。HfO2薄膜具有高介电常数和低泄漏电流,适用于微电子中的绝缘体应用。这些薄膜在窄孔中具有非常均匀的厚度和完全的阶梯覆盖。