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sodium 2-(1-adamantanecarbonyloxy)-1,1,3,3,3-pentafluoropropane-sulfonate

中文名称
——
中文别名
——
英文名称
sodium 2-(1-adamantanecarbonyloxy)-1,1,3,3,3-pentafluoropropane-sulfonate
英文别名
sodium 1,1,3,3,3-pentafluoro-2-(adamantane-1-carbonyloxy)propanesulfonate;Sodium 1,1,3,3,3-pentafluoro-2-(adamantane-1-carbonyloxy)propanesulfonate;sodium;2-(adamantane-1-carbonyloxy)-1,1,3,3,3-pentafluoropropane-1-sulfonate
sodium 2-(1-adamantanecarbonyloxy)-1,1,3,3,3-pentafluoropropane-sulfonate化学式
CAS
——
化学式
C14H16F5O5S*Na
mdl
——
分子量
414.326
InChiKey
USWVWFGLNOQNDU-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -0.18
  • 重原子数:
    26
  • 可旋转键数:
    5
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.93
  • 拓扑面积:
    91.9
  • 氢给体数:
    0
  • 氢受体数:
    10

反应信息

  • 作为反应物:
    描述:
    sodium 2-(1-adamantanecarbonyloxy)-1,1,3,3,3-pentafluoropropane-sulfonate1-(4-hydroxy-1-naphthyl)thiolanium chloride二氯甲烷4-甲基-2-戊酮异丙醚 作用下, 生成 4-hydroxynaphthyl-1-tetrahydrothiophenium 2-(adamantane-1-carbonyloxy)-1,1,3,3,3-pentafluoropropanesulfonate
    参考文献:
    名称:
    NITROGEN-CONTAINING ORGANIC COMPOUND, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
    摘要:
    一种以咪唑基为基础的芳基氨基甲酸酯作为淬灭剂是有效的。在化学增感正向光阻组成物中,包含了这种氨基甲酸酯,当暴露于高能辐射时,与所产生的酸反应会发生去保护反应,从而使组成物在暴露前后改变其碱度,导致具有高分辨率、矩形形状和最小化暗亮差异等优点的图案轮廓。
    公开号:
    US20120052441A1
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文献信息

  • NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM
    申请人:OHASHI Masaki
    公开号:US20120119171A1
    公开(公告)日:2012-05-17
    A near-infrared absorbing dye has an anion of formula (1) wherein A 1 is H or CF 3 , R 0 is OH or —OC(═O)—R′, and R′ is a monovalent hydrocarbon group. The dye has excellent solvent solubility as well as good optical properties and heat resistance, offering the advantages of easy coating and effective working during film formation. The dye free of heavy metal in its structure is advantageously used in the process of fabricating semiconductor devices.
    一种近红外吸收染料具有如下式(1)的阴离子,其中A1为H或CF3,R0为OH或—OC(═O)—R′,而R′为一价碳氢基团。该染料具有优异的溶剂溶解性以及良好的光学性能和耐热性,提供易于涂覆和在薄膜形成过程中有效工作的优点。该染料在其结构中不含重属,因此在制造半导体器件的过程中具有优势应用。
  • SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20180275516A1
    公开(公告)日:2018-09-27
    The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion. The present invention was accomplished by a sulfonium salt including an anion and a cation, the cation having a partial structure represented by the following general formula (1), except for a sulfonium salt having a cation represented by the following general formula (1′),
    本发明提供了一种亚砜盐,能够提供在光刻工艺中使用高能光束作为光源时具有较少缺陷的光刻胶组合物,并通过控制酸扩散在光刻性能方面表现出色。本发明通过包括阴离子和阳离子的亚砜盐实现,其中阳离子具有以下通用式(1)所表示的部分结构,除了具有以下通用式(1')所表示的阳离子的亚砜盐。
  • 술포늄염, 레지스트 재료 및 패턴 형성 방법
    申请人:SHIN-ETSU CHEMICAL CO., LTD. 신에쓰 가가꾸 고교 가부시끼가이샤(519980708960)
    公开号:KR101498326B1
    公开(公告)日:2015-03-03
    본 발명은 하기 화학식(1a) 또는 (1b)로 표시되는 술포늄염을 제공한다. 상기 식 중, R은 헤테로원자를 포함해도 좋은 탄소수 7∼30의 직쇄상, 분기상 또는 환상의 1가의 탄화수소기를 나타내고, n'는 1∼4의 정수를 나타낸다. 본 발명의 술포늄염은, 통상의 술포늄염과 상이하고 친수성이 높은 페놀성 수산기나 에틸렌글리콜쇄를 갖고 있고, 특정 음이온과 조합한 본 발명의 술포늄염을 레지스트 재료에 이용한 경우에는 액침수로의 용출도 적고, 또 패턴 의존성(다크 브라이트차)이 적어 화학 증폭형 레지스트 재료의 광산 발생제로서 매우 유용하다.
    本发明提供了用以下化学式(1a)或(1b)表示的盐。在上述式中,R表示直链、支链或环状的1个碳氢基,其包括杂原子,碳数为7〜30,n'表示1〜4的整数。本发明的盐具有与通常的盐不同的高亲性羟基或乙二醇醚,并且当将本发明的盐与特定阴离子组合并用于光刻胶材料时,其溶出度低,并且具有较小的模式依赖性(暗亮度),因此作为化学放大型光刻胶材料的光敏剂非常有用。
  • POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:Kobayashi Tomohiro
    公开号:US20120135350A1
    公开(公告)日:2012-05-31
    A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
    一种正性光阻组合物,包括(A)一种聚合物,其中包含适于在高能辐射作用下产生酸和酸不稳定单元的特定结构的重复单元,该聚合物具有碱溶性,在酸的作用下碱溶性增加,以及(B)一种特定结构的磺酸盐,能够在形成细小尺寸图案,通常是沟槽和孔图案时,表现出高分辨率。轮廓、深度焦点和粗糙度的光刻特性得到改善。
  • Nitrogen-containing organic compound, chemically amplified positive resist composition, and patterning process
    申请人:Sagehashi Masayoshi
    公开号:US08778591B2
    公开(公告)日:2014-07-15
    An aralkylcarbamate of imidazole base is effective as the quencher. In a chemically amplified positive resist composition comprising the carbamate, deprotection reaction of carbamate takes place by reacting with the acid generated upon exposure to high-energy radiation, whereby the composition changes its basicity before and after exposure, resulting in a pattern profile with advantages including high resolution, rectangular shape, and minimized dark-bright difference.
    一种以咪唑基为基础的阿拉基氨基甲酸酯作为淬灭剂是有效的。在化学增强正性光阻组成中,包括该氨基甲酸酯,当暴露于高能辐射时,与产生的酸反应,从而发生氨基甲酸酯的脱保护反应,使得组成物在暴露前后改变其碱性,从而导致具有高分辨率,矩形形状和最小化暗亮差异等优点的图案轮廓。
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