Ground State Stereoelectronic Effects of Silicon: A Comparison of the Effects of Synperiplanar and Antiperiplanar Silicon on C-O Bond Lengths at the .beta. Position
摘要:
Results from low-temperature crystal structure analyses of beta-trimethylsilyl esters with synperiplanar and antiperiplanar geometry are reported. These studies reveal a significant response of the C(alkyl)-O(ester) bond length to the electron demand of the ester function when the beta-trimethylsilyl substituent is antiperiplanar to the ester. However, when the geometry is synperiplanar, the C-O bond lengths are not significantly different from those of the corresponding nonsilylated derivatives. This is interpreted in terms of more effective overlap between the sigma(C-Si) orbital and the sigma*(C-O) antibonding orbital in the antiperiplanar geometry than in the synperiplanar geometry.
Ground State Stereoelectronic Effects of Silicon: A Comparison of the Effects of Synperiplanar and Antiperiplanar Silicon on C-O Bond Lengths at the .beta. Position
作者:Alison J. Green、Yew-leong Kuan、Jonathan M. White
DOI:10.1021/jo00114a021
日期:1995.5
Results from low-temperature crystal structure analyses of beta-trimethylsilyl esters with synperiplanar and antiperiplanar geometry are reported. These studies reveal a significant response of the C(alkyl)-O(ester) bond length to the electron demand of the ester function when the beta-trimethylsilyl substituent is antiperiplanar to the ester. However, when the geometry is synperiplanar, the C-O bond lengths are not significantly different from those of the corresponding nonsilylated derivatives. This is interpreted in terms of more effective overlap between the sigma(C-Si) orbital and the sigma*(C-O) antibonding orbital in the antiperiplanar geometry than in the synperiplanar geometry.