高能 HOMO 的必要性和满足此要求的化合物的空气敏感性阻碍了用于有机半导体材料的空气稳定 n 掺杂剂的发现。解决这个问题的一种策略是利用稳定的前体分子,在掺杂过程中或在沉积后的热激活或光激活步骤中原位形成活性掺杂复合物。我们中的一些人已经报道了分别使用 1H-苯并咪唑 (DMBI) 和苯并咪唑鎓 (DMBI-I) 盐作为可溶液和真空加工的 n 型掺杂剂前体。最初建议 DMBI 掺杂剂用作单电子自由基供体,其中活性掺杂物质,咪唑啉自由基,在沉积后热退火步骤中产生。在此,我们报告了对 DMBI 掺杂富勒烯的广泛机理研究的结果,其结果表明更复杂的掺杂机制在起作用。具体而言,掺杂剂和主体之间的反应始于氢化物或氢原子转移,最终导致主体自由基阴离子的形成,这是掺杂效应的原因。这项研究的结果将有助于确定当前有机 n 掺杂技术的应用,并将推动下一代 n 型掺杂剂的设计,这些掺杂剂具有空气稳定性,能够在有
In one aspect, the invention relates to compounds having the formula:
wherein: Ar, Z, R
3
, R
4
and R
5
are as defined in the specification, or a pharmaceutically acceptable salt thereof. These compounds have AT
1
receptor antagonist activity and neprilysin inhibition activity. In another aspect, the invention relates to pharmaceutical compositions comprising such compounds; methods of using such compounds; and process and intermediates for preparing such compounds.
N-TYPE ORGANIC SEMICONDUCTOR FORMULATIONS AND DEVICES
申请人:Yuning LI
公开号:US20170092865A1
公开(公告)日:2017-03-30
The present invention discloses an organic semiconductor formulation comprising an organic semiconductor (OSC) and an organic nitrogen-containing additive (ONA) capable of enhancing the n-type performance of the organic semiconductor. The semiconductor formulation disclosed herein is suitable for producing n-type semiconductor thin films for use in a variety of electronic applications and devices.