2,4-dimethylcyclobutanecarboxylic acid

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2,4-dimethylcyclobutanecarboxylic acid
• 英文别名: 1,3-Dimethylcyclobutane-2-carboxylic acid；2,4-dimethylcyclobutane-1-carboxylic acid
• 化学式: C₇H₁₂O₂
• mdl: MFCD19230958
• 分子量: 128.171
• InChiKey: SVZPBNNIXYMEPB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  9
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.857
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  二溴戊烷 、 丙二酸二乙酯 在 sodium hydroxide 、 苄基三乙基氯化铵 作用下， 生成 3,4-二甲基戊-4-烯羧酸 、 2,4-dimethylcyclobutanecarboxylic acid
  参考文献：
  名称：

  Toeroek, Bela; Molnar, Arpad, Journal of the Chemical Society. Perkin transactions I, 1993, # 7, p. 801 - 804

  摘要：

  DOI：

文献信息

• THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP2735904A1

  公开（公告）日：2014-05-28

  There is provided a thin film forming composition for forming resist underlayer film and the like which are used in the production of a semiconductor device, and a resist upper layer film which efficiently absorbs undesirable UV light with a thin film existing as an upper layer of the EUV resist before the undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. A thin film forming composition that is used together with a resist in a lithography process, comprising a mixture of a titanium compound (A) selected from a group consisting of a compound of Formula (1):         R0aTi(R1)(4-a)     Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B) of Formula (2):         R2a'R3bSi(R4)4-(a'+b)     Formula (2) a hydrolysis product of the mixture, or a hydrolysis-condensation product of the mixture, wherein the number of moles of a Ti atom is 50% to 90% relative to the number of total moles in terms of a Ti atom and a Si atom in the composition.

  本发明提供了一种薄膜形成组合物，用于形成半导体器件生产中使用的抗蚀剂下层膜等，以及一种抗蚀剂上层膜，该抗蚀剂上层膜在极紫外光刻中，在不希望的紫外光到达极紫外光抗蚀剂层之前，作为极紫外光抗蚀剂的上层薄膜存在，可有效吸收不希望的紫外光；一种极紫外光抗蚀剂下层膜（硬掩膜），一种反向材料，以及一种用于溶剂显影的抗蚀剂下层膜。一种在光刻工艺中与抗蚀剂一起使用的薄膜成型组合物，包括选自由式（1）化合物组成的组中的钛化合物（A）的混合物： R0aTi(R1)(4-a) 式(1) 一种钛螯合物和一种可水解的钛二聚物，以及一种式（2）的硅化合物（B）： R2a'R3bSi(R4)4-(a'+b) 式(2) 混合物的水解产物，或混合物的水解缩合产物，其中钛原子的摩尔数相对于组合物中钛原子和硅原子的总摩尔数为 50%至 90%。
• Mask blank, method for manufacturing mask blank and transfer mask
  申请人：HOYA CORPORATION

  公开号：US10042247B2

  公开（公告）日：2018-08-07

  There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

  本发明提供了一种掩膜坯料，其基板上包括：用于形成转印图案的薄膜；形成在薄膜上的抗蚀剂底层，由抗蚀剂底层组合物制成，该抗蚀剂底层组合物含有具有内酯环的单元结构和具有羟基的单元结构的聚合物；形成在抗蚀剂底层薄膜上的抗蚀剂薄膜，由抗蚀剂组合物制成；以及形成在抗蚀剂底层薄膜和抗蚀剂薄膜之间的混合薄膜，由含有抗蚀剂底层组合物和抗蚀剂组合物的混合成分制成。
• Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10289002B2

  公开（公告）日：2019-05-14

  An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.

  一种电子束抗蚀剂底层成膜组合物包括一种聚合物，该聚合物含有一个具有内酯环的单元结构和一个具有羟基的单元结构。该聚合物可以是通过共聚含有内酯（甲基）丙烯酸酯、羟基烷基（甲基）丙烯酸酯和苯基（甲基）丙烯酸酯或苄基（甲基）丙烯酸酯的单体混合物而得到的聚合物。一种生产半导体器件的方法，包括：将电子束抗蚀剂底层成膜组合物涂在基片上并加热所涂组合物以形成电子束抗蚀剂底层膜；用电子束抗蚀剂涂覆电子束抗蚀剂底层膜；用电子束照射涂有电子束抗蚀剂底层膜和电子束抗蚀剂的基片；显影基片；以及通过干蚀刻将图像转移到基片上以形成集成电路元件。
• METAL-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYACID
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20160251546A1

  公开（公告）日：2016-09-01

  A resist underlayer film-forming composition including: (A) component: an isopoly or heteropoly acid, or a salt thereof, or a combination thereof; and (B) component: polysiloxan, poly hafnium oxide or zirconium oxide, or a combination thereof, wherein an amount of the (A) component is 0.1 to 85% by mass of a total amount of the (A) component and the (B) component; and polysiloxan is a hydrolysis-condensation product of hydrolyzable silane of Formula (1): R 1 a R 2 b Si(R 3 ) 4-(a+b) (1) and a hydrolyzable silane whose (a+b) is 0 is contained in a proportion of 60 to 85 mol % of a total hydrolyzable silane in Formula (1); the poly hafnium oxide is a hydrolysis-condensation product of hydrolyzable hafnium of Formula (2): Hf(R 4 ) 4 (2) and the zirconium oxide is a hydrolysis-condensation product of hydrolyzable zirconium of Formula (3) or Formula (4): Zr(R 5 ) 4 (3) ZrO(R 6 ) 2 (4) or a hydrolysis-condensation product of a combination thereof.
• ELECTRON BEAM RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING LACTONE-STRUCTURE-CONTAINING POLYMER
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20160363863A1

  公开（公告）日：2016-12-15

  An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.