The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F
2
laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
申请人:NISHI Tsunehiro
公开号:US20100062374A1
公开(公告)日:2010-03-11
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R
1
is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.
NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:Ohsawa Youichi
公开号:US20090246694A1
公开(公告)日:2009-10-01
Photoacid generators generate sulfonic acids of formula (
1
a) upon exposure to high-energy radiation.
ROC(═O)R
1
—COOCH
2
CF
2
SO
3
−
H
+
(1a)
RO is OH or C
1
-C
20
organoxy, R
1
is a divalent C
1
-C
20
aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20100099042A1
公开(公告)日:2010-04-22
A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R
1
is H, F, methyl or trifluoromethyl, R
2
, R
3
and R
4
are C
1
-C
10
alkyl, alkenyl or oxoalkyl or C
6
-C
18
aryl, aralkyl or aryloxoalkyl, or two of R
2
, R
3
and R
4
may bond together to form a ring with S, A is a C
2
-C
20
hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:Kinsho Takeshi
公开号:US20100304295A1
公开(公告)日:2010-12-02
An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R
2
is H or monovalent hydrocarbon, R
3
and R
4
are H or monovalent hydrocarbon, or R
3
and R
4
, taken together, stand for a divalent group which forms a cyclopentane or cyclohexane ring, and n is 1 or 2. A polymer obtained from the acid-labile ester monomer has so high reactivity in acid-catalyzed elimination reaction that the polymer may be used to formulate a resist composition having high resolution.