2,6-bis(2-thianaphthene-2-yl-vinyl)anthracene

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 2,6-bis(2-thianaphthene-2-yl-vinyl)anthracene
• 英文别名: 2-[(E)-2-[6-[(E)-2-(1-benzothiophen-2-yl)ethenyl]anthracen-2-yl]ethenyl]-1-benzothiophene
• 化学式: C₃₄H₂₂S₂
• 分子量: 494.681
• InChiKey: IPNRFDKSXOOSNT-JOBJLJCHSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  11.1
• 重原子数：
  36
• 可旋转键数：
  4
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  56.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  1-苯并噻酚-2-羧醛 、 2,6-bis[(diethoxyphosphoryl)methyl]anthracene 在 lithium diisopropyl amide 作用下， 以 四氢呋喃 、 环己烷 为溶剂， 生成 2,6-bis(2-thianaphthene-2-yl-vinyl)anthracene
  参考文献：
  名称：

  Organic thin-film transistors based on 2,6-bis(2-arylvinyl)anthracene: high-performance organic semiconductors

  摘要：

  两种基于芳基乙烯基蒽的新型有机半导体在经过 OTS 处理的二氧化硅/硅上表现出良好的电气性能（高达 0.2 cm2V-1 s-1），且基底沉积温度较低，易于大量合成。

  DOI：

  10.1039/b803741h

文献信息

• COMPOUND FOR ORGANIC THIN-FILM TRANSISTOR AND ORGANIC THIN-FILM TRANSISTOR USING THE COMPOUND
  申请人：Saito Masatoshi

  公开号：US20110031487A1

  公开（公告）日：2011-02-10

  A compound for an organic thin film transistor having a structure shown by the following formula (1): X 1 -L-Ar-L-X 2 (1) wherein L is —C≡C—, or —CH═CH— in a trans configuration, X 1 and X 2 are independently a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and their bonding positions to L are in heterocycles, Ar is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 ring carbon atoms, or a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and at least one of X 1 , X 2 and Ar is a bi- or higher-fused ring.
• Organic thin-film transistors based on 2,6-bis(2-arylvinyl)anthracene: high-performance organic semiconductors
  作者：Myoung-Chul Um、Junhyuk Jang、Jung-Pyo Hong、Jihoon Kang、Do Yeung Yoon、Seong Hoon Lee、Jang-Joo Kim、Jong-In Hong

  DOI：10.1039/b803741h

  日期：——

  Two novel organic semiconductors based on arylvinylanthracene have exhibited good electrical performance (up to 0.2 cm2V−1 s−1) on OTS treated SiO2/Si at a low substrate deposition temperature and can be easily synthesized in large quantities.

  两种基于芳基乙烯基蒽的新型有机半导体在经过 OTS 处理的二氧化硅/硅上表现出良好的电气性能（高达 0.2 cm2V-1 s-1），且基底沉积温度较低，易于大量合成。