glycidyl ether of 2-t-butyl-5-methylphenol

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: glycidyl ether of 2-t-butyl-5-methylphenol
• 英文别名: 2-[(2-Tert-butyl-5-methylphenoxy)methyl]oxirane
• 化学式: C₁₄H₂₀O₂
• 分子量: 220.312
• InChiKey: CGHKYRDHXURMRY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.57
• 拓扑面积：
  21.8
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  叔丁胺 、 glycidyl ether of 2-t-butyl-5-methylphenol 生成 1-tert-Butylamino-3-(2-tert-butyl-5-methyl-phenoxy)-propan-2-ol
  参考文献：
  名称：

  DE1236523

  摘要：

  公开号：
• 作为产物：
  描述：

  聚合甲醛 、 6-叔丁基间甲酚 、 环氧氯丙烷 在 sodium hydroxide 、 对甲苯磺酸 作用下， 以 水 、 二甲基亚砜 、 4-甲基-2-戊酮 为溶剂， 生成 glycidyl ether of 2-t-butyl-5-methylphenol
  参考文献：
  名称：

  Novel ester compound and thermosetting resin composition using the same

  摘要：

  公开号：

  EP0811619B1

文献信息

• PHOTOCURABLE COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20190171101A1

  公开（公告）日：2019-06-06

  A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40. The nitrogen-containing structure contains a reactive nitrogen-containing functional group or reactive carbon-containing functional group produced by irradiation with ultraviolet light; and the sulfur-containing structure contains an organic sulfur radical or carbon radical produced by irradiation with ultraviolet light.
• PROTECTIVE FILM FORMING COMPOSITION HAVING AN ACETAL STRUCTURE
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20200409260A1

  公开（公告）日：2020-12-31

  A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one acetal structure in a molecule thereof, and forms a protective film exhibiting excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.
• STEPPED SUBSTRATE COATING COMPOSITION CONTAINING COMPOUND HAVING CURABLE FUNCTIONAL GROUP
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20210024773A1

  公开（公告）日：2021-01-28

  A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.
• PROTECTIVE FILM-FORMING COMPOSITION HAVING ACETAL STRUCTURE AND AMIDE STRUCTURE
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20220026806A1

  公开（公告）日：2022-01-27

  A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.
• RESIST UNDERLAYER FILM-FORMING COMPOSITION
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20220146939A1

  公开（公告）日：2022-05-12

  A resist underlayer film-forming composition revealing high reflow properties while applying and heating the composition on a substrate, allowing a flat application on a multi-level substrate thus forming a flat film. The composition includes a copolymer having a repeating structural unit of the following Formula (1) and/or a repeating structural unit of the following Formula (2) and an organic solvent: (in Formulae (1) and (2), R 1 is a functional group of Formula (3); in Formula (3), Q 1 and Q 2 are each independently a hydrogen atom or a C 1-5 alkyl group, and * is a dangling bond to an oxygen atom; and in Formula (2), X 1 is a C 1-50 organic group, and i and j are each independently 0 or 1).