supersilylgallium dibromide-tetrahydrofuran (1/1)

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 氧唑烯
• 英文名称: supersilylgallium dibromide-tetrahydrofuran (1/1)
• 英文别名: dibromosupersilylgallane-tetrahydrofuran(1:1)
• 化学式: C₁₆H₃₅Br₂GaOSi
• 分子量: 501.07
• InChiKey: QJJGXQJZPOAHSA-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  6.99
• 重原子数：
  21
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  tetrakis(supersilyl)-tetrahedro-tetragallane 以 四氢呋喃 、 正庚烷 、 氘代苯 、 甲苯 为溶剂， 生成 supersilylgallium dibromide-tetrahydrofuran (1/1)
  参考文献：
  名称：

  Wiberg, Nils; Blank, Thomas; Westerhausen, Matthias, European Journal of Inorganic Chemistry

  摘要：

  DOI：

文献信息

• Supersilyltrielane R _nEHal_3-n (E = Triel, R = SitBu₃): Synthesen, Charakterisierung, Reaktionen, Strukturen [1] / Supersilyltrielanes R _nEHal_3-n (E = Triel, R = SitBu₃): Syntheses, Characterization, Reactions, Structures [1]
  作者：Nils Wiberg、Kerstin Amelunxen、Thomas Blank、Hans-Wolfram Lerner、Kurt Polborn、Heinrich Nöth、Ralf Littger、Manfred Rackl、Martin Schmidt-Amelunxen、Holger Schwenk-Kircher、Markus Warchold

  DOI：10.1515/znb-2001-0712

  日期：2001.7.1

  Water- and oxygen-sensitive compounds R*EHal₂•D, R*EHal₂ and R*₂EHal (R* = SitBu₃; E = B, Al, Ga, In, TI; Hal = F, Cl, Br, I; D = OR₂, NR₃) have been synthesized by reaction of EHal₃ with NaR* in the absence or presence of donors as well as by substitution of D, Hal or R* by other substituents, or by reaction of R*₂E-ER*₂ (E = Al, In) with I₂, H₂, AgF₂ or HBr. Thermal decomposition of the compounds in solution or in the gas phase leads to elimination of D from R*EHal₂•D, or of R*Hal from R*EHal₂ and R*₂EHal, respectively. The dihalides R*EHal₂ act as Lewis acids with respect to donors OR₂ or NR₃ (formation of adducts R*EHal₂•D), the monohalides R*₂EHal as Lewis bases with respect to acceptors EHal₃ (formation of R*₂E⁺ EHal₄ ^-). Dehalogenations of R*₂EHal and R*EHal₂ with alkali metals or NaR* leads to compounds R*₄E₂ (E = AI, In, Tl), R*₃E₂• (E = AI, Ga), R*₄E₃ ^• (E = Al, Ga), R*₄E₄ (E = AI, Ga), R*₆Ga₈, R*₈In₁₂, (R*₂B^- ), R*₂A^- , R*₃Ga₂ ^-, R*₄Ga₃ ^-, R*₄Ga₄ ^2-, R*₄Tl₃Cl, or R*₆Tl₆Cl₂. The structures of R*BBr₂•Py, R*AlBr₂•NEtMe₂, (R*AlClOBu)₂, R*₂BF as well as R*₂ECl (E = B, Al, Ga, Tl) have been determined by X-ray structure analyses.

  水和氧敏感化合物 R*EHAl₂•D、R*EHAl₂ 和 R*₂EHAl（R* = SitBu₃；E = B，Al，Ga，In，TI；Hal = F，Cl，Br，I；D = OR₂，NR₃）已通过 EHAl₃ 与 NaR* 在存在或不存在供体的情况下反应合成，或通过 D、Hal 或 R* 被其他取代基取代，或通过 R*₂E-ER*₂（E = Al，In）与 I₂、H₂、AgF₂ 或 HBr 反应合成。这些化合物在溶液中或气相中的热分解导致 R*EHAl₂•D 中的 D 或 R*EHAl₂ 和 R*₂EHAl 中的 R*Hal 被消除。二卤化物 R*EHAl₂ 与供体 OR₂ 或 NR₃ 作为 Lewis 酸（形成加合物 R*EHAl₂•D），而单卤化物 R*₂EHAl 与受体 EHAl₃ 作为 Lewis 碱（形成 R*₂E⁺ EHAl₄^-）。用碱金属或 NaR* 去卤化 R*₂EHAl 和 R*EHAl₂ 会导致化合物 R*₄E₂（E = AI，In，Tl），R*₃E₂•（E = AI，Ga），R*₄E₃^•（E = Al，Ga），R*₄E₄（E = AI，Ga），R*₆Ga₈，R*₈In₁₂，（R*₂B^-），R*₂A^-，R*₃Ga₂^-，R*₄Ga₃^-，R*₄Ga₄^2-，R*₄Tl₃Cl，或 R*₆Tl₆Cl₂。R*BBr₂•Py、R*AlBr₂•NEtMe₂、（R*AlClOBu）₂、R*₂BF 以及 R*₂ECl（E = B，Al，Ga，Tl）的结构已通过 X 射线结构分析确定。
• Supersilylverbindungen Der Borgruppenelemente, IV [1]. Supersilylelementhalogenide tBu₃SIEX₂ Und (tBu₃Si)₂Ex Mit E = Al, Ga, In: Synthesen, Eigenschaften, Strukturen [2] / Supersilylated Compounds of the Thirteenth Group, IV [I]. Supersilylelement Halides tBu₃SIEX₂ And (tBu₃Si)₂Ex with E = Al, Ga, In: Syntheses, Properties, Structures [2]
  作者：Nils Wiberg、Kerstin Amelunxen、Hans-Wolfram Lemer、Heinrich Nöth、Jörg Knizek、Ingo Krossing

  DOI：10.1515/znb-1998-0312

  日期：1998.3.1

  Water and oxygen sensitive compounds (tBu₃SiEX₂)2, tBu₃SiEX₂ Do and (tBu₃Si)2EX (E = AI, Ga, In; X = (F), Cl, Br; Do = OR₂, NR₃) have been synthezised by reaction of EX₃ with tBu₃SiNa in the absence or presence of donors. In addition, (tBu₃Si)AlBr₂, (tBu₃Si)₂InF and tBu₃SiInBr₂ were prepared by reaction of AlBr₃ with (tBu₃Sij₂Zn or of (tBu₃Si)₂In- In(Si/Bu₃)₂ with AgF₂ and HBr, respectively. The adduct [tBu₃SiAlBr₂ · AlBr₃ ·1/2MgBr₂]₂ is formed from AlBr₃ and (tBu₃Si)₂Mg(THF)₂. Thermal decomposition of the compounds in solution or in the gas phase leads to the formation of tBu₃SiEX₂ (from the dimers or the donor adducts) and of tBu₃SiX. The Lewis acidity of tBu₃SiEX₂ against donors increases in the direction Do = Et₂O < THF < NEtMe₂. Dehalogenation of (tBu₃Si)₂ECl with tBu₃SiNa(THF)₂ in pentane at room temperature leads to clusters (tBu₃Si)₄Al₂, (tBu₃Si)₃Ga₂ ^•, (tBu₃Si)₄In₂ and (tBu₃Si)₃Ga₂Na(THF)₃, reduction of tBu₃SiGaCl₂ with Na or K in heptane at 100°C to the tetrahedran (tBu₃Si)₄Ga₄. The structures of (tBu₃SiGaCl₂)₂, (tBu₃Si)₂GaCl, and [tBu₃SiAlBr₂ AlBr₃ ·1/2MgBr₂]₂ have been determined by X-ray structure analysis.

  摘要：水和氧敏感化合物(tBu3SiEX2)2，tBu3SiEX2 Do和(tBu3Si)2EX(E = AI，Ga，In；X = (F)，Cl，Br；Do = OR2，NR3)已通过EX3与tBu3SiNa在有无供体的情况下反应合成。此外，(tBu3Si)AlBr2，(tBu3Si)2InF和tBu3SiInBr2通过AlBr3与(tBu3Sij2Zn或(tBu3Si)2In-In(Si/Bu3)2与AgF2和HBr反应制备。加合物[tBu3Si · ·1/2MgBr2]2由 和(tBu3Si)2Mg(THF)2形成。溶液中或气相中化合物的热分解导致tBu3SiEX2(来自二聚体或供体加合物)和tBu3SiX的形成。tBu3SiEX2对供体的Lewis酸性在Do = Et2O < THF < NEtMe2方向上增加。在室温下，将(tBu3Si)2ECl与tBu3SiNa(THF)2在戊烷中脱卤化，导致(tBu3Si)4Al2，(tBu3Si)3Ga2•，(tBu3Si)4In2和(tBu3Si)3Ga2Na(THF)3团簇的形成，将tBu3SiGaCl2与Na或K在庚烷中加热至100°C还原为四面体(tBu3Si)4Ga4。通过X射线结构分析确定了(tBu3SiGaCl2)2，(tBu3Si)2GaCl和[tBu3Si ·1/2MgBr2]2的结构。