METHOD OF DRY ETCHING, DRY ETCHING GAS AND PROCESS FOR PRODUCING PERFLUORO-2-PENTYNE
申请人:Zeon Corporation
公开号:EP1542268A1
公开(公告)日:2005-06-15
A dry etching method wherein a resist film is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas. As the fluorine-containing compound, perfuloro-2-pentyne, perfuloro-2-butyne, nonafluoro-2-pentene and perfluoro-2-pentene are preferably used. Perfuloro-2-pentyne is produced by a process wherein a 1,1,1-trihalo-2,2,2-trifluoroethane is allowed to react with pentafluoropropionaldehyde to give a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene, and the thus-produced halo-octafluoro-2-pentene is dehydrohalogenated.
一种干法蚀刻方法,其中用波长不超过 195 纳米的辐射照射抗蚀剂薄膜,以形成最小线宽不超过 200 纳米的抗蚀剂图案,并使用具有 4 至 6 个碳原子和至少一个不饱和键的含氟化合物作为蚀刻气体,对在其上形成了抗蚀剂图案的基板进行干法蚀刻。作为含氟化合物,最好使用全氟-2-戊炔、全氟-2-丁炔、非全氟-2-戊烯和全氟-2-戊烯。全氟-2-戊炔的生产工艺是:1,1,1-三卤-2,2,2-三氟乙烷与五氟丙醛反应生成 2-卤-1,1,1,4,4,5,5,5-八氟-2-戊烯,然后将生成的卤代八氟-2-戊烯进行脱氢卤化。