A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent:
(where R
1
is a hydrogen atom or a methyl group; each of R
2
and R
3
is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R
4
is a hydrogen atom or a hydroxy group; Q
1
is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x
1
is 0 or 1; and x
2
is an integer of 1 to 5).
一种组成物形成抗蚀底层膜,显示出对抗蚀图案改进的粘附性。一种用于光刻的抗蚀底层膜形成组合物,包括:具有以下公式(1a)、公式(1b)或公式(2)结构的聚合物,其位于聚合物的一端;以及有机溶剂:(其中R1是氢原子或甲基基团;R2和R3各自独立地是氢原子或有机基团,例如烃基团等,烃基团可选地具有至少一个羟基和一个甲
硫基作为取代基;R4是氢原子或羟基;Q1是芳基烃基团;v为0或1;y为1到4的整数;w为1到4的整数;x1为0或1;x2为1到5的整数)。