Photomask and manufacturing method of an electronic device therewith
申请人:——
公开号:US20020086222A1
公开(公告)日:2002-07-04
In the step of manufacturing a photomask, an opaque pattern is formed by using a photosensitive resin composition containing a specified light absorbent, which then used to manufacture a photomask for KrF excimer laser lithography in a short manufacturing time and at a reduced cost. Accordingly, the manufacturing time and the cost for semiconductor integrated circuit devices is reduced.
Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern
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efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate
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The resist pattern
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comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.
The silicon analogues of the oligo(p -phenylenevinylene)s (Si-OPVs) with highly planar structures have been synthesized using a newly developed ligand, the 1,1,3,3,5,5,7,7-octaethyl-s -hydrindacen-4-yl (Eind) group. Their X-ray crystal structures and spectroscopic data demonstrate that the pi-conjugation effectively extends over the Si-OPV framework. Notably, tetrasiladistyrylbenzene exhibits an orange fluorescence even at room temperature both in solution and in the solid state, which is attributable to the effective extension of conjugation. To the best of our knowledge, the tetrasiladistyrylbenzene is the first emissive Si=Si derivative even at room temperature.